Chapter
The Role of Point Defects in Non-Stoichiometric III-V Compounds
Intrinsic Acceptors in Semi-Insulating Galliumarsenide Studied by Positron Annihilation and ODMR
Bound Exciton Spectra in Semi-Insulating GaAs
Oscillations in PLE Spectra of Li Passivated GaAs, Related to Interstitial Li Donors
Magneto-Optical and Odendor Investigations of the Substitutional Oxygen Defect in Galliumarsenide
Identification of Phonon Scattering Resonances with Defects in Gallium Arsenide
Photoluminescence of Germanium Doped Gallium Arsenide
Effect of Donor Nature on Behavior of Photoluminescence of the Gallium Vacancy - Shallow Donor Complexes in n-Type GaAs under Uniaxial Pressure
Structure of the 0.95 eV Photoluminescence Centers in n-Type GaAs
Effects of Activation Annealing on Thermally Stimulated Current in Semi-Insulating LEC GaAs Substrates
Arsenic-Antisite-Related Defects in GaAs Grown at Low Temperature: Charaterization of Localized States
Generation of EL2- Level Upon Rapid Thermal Annealing in Low-Temperature GaAs Layers Grown by MBE
Thermal and Optical Emission Processes of Electrons and Holes from EL2 in N- and P-Type GaAs
Studies of Deep Levels in n-GaAs by SADLTS
Trends in the Metastability of DX-Centers
Carrier Concentrations Saturation in n Type AlxGa1-xAs
Doping Puzzles in II-VI and III-V Semiconductors
Theoretical Study on Hole Compensation Mechanism: - Stability of Two Nitrogen Atoms at SE Substitutional Site of ZNSE -
Acceptor Compensation in Nitrogen Doped Zinc Selenide
Nitrogen-Doping Efficiency in ZnSe and ZnTe
Doping of ZnSe, ZnTe, and CdTe with Group V Elements
Lattice Sites of Ion Implanted Li in Zn-Rich ZnSe
Intrinsic Defects in ZnSe, ZnTe, and CdS Doped with Li
The Electronic Structure of Deep Donors and the Nature of the Anion Vacancy in II-VI Compound Semiconductors
Studies of Defects in Electron and Proton Irradiated ZnO by Positron Annihilation
Photoluminescence of Bulk Si-Ge Single Crystals
Dopant Diffusion in Strained and Relaxed Si1-xGex
In Situ Phosphorus Doping of Si and Si1-xGex Epitaxial Layers by RTP/VLP-CVD
Electrical Transport in SixGe1-x Bulk Alloys
Electron Paramagnetic Resonance of Phosphorus, Platinum, and Iron in Float Zone Si1-x Gex Crystals
Relaxation-Induced Deep Levels in SiGe/Si Heteroepitaxial Films
Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices
Photoluminescence of Deformed Si-Ge Alloy
Influence of Cu Contamination and Hydrogenation on Recombination Activity of Misfit Dislocations in SiGe/Si Epilayers
An Electron Paramagnetic Resonance Study of Defects in Semiconducting Iron Disilicide
DX Centres Versus Shallow D-Centres in AIGaAs Based Quantum Wells
Extrinsic Self-Trapping of an Electron in Quantum-Well Structures
Carbon Delta-Doping In GaAs and AlAs
Theory of Si δ-Doped GaAs
Metastability and Electronic Structure of Periodically n-Type and p-Type δ-Doped Layer in GaAs
Infrared and Raman Studies of Si Delta-Doped (100) GaAs Grown by MBE at 400°C on c(4x4) Surfaces
Saturation of Luminescence Quenching Due to Nonradiative Centers in a GaAs/AlGaAs Quantum Well
Defect Induced Electron Transport Trough Semiconductor Barriers
Correlated Charged Donors in GaAs/AlGaAs Quantum Well. Quantum- and Mobility-Scattering Times
Non-Radiative Recombination in Irradiated GaAs/AlGaAs Multiple Quantum Wells
Defect Related Recombination Processes in II-VI Quantum Wells
Magnetoelectronic States in Semiconductor / Antiferromagnet Superlattices
Shallow and Deep Centers in Heavily Doped Silicon Quantum Wells
Important Nonradiative Grown-In Defects in MBE-Grown Si and SiGe/Si Heterostructures
Defect Formation and Recombination Processes in p-Type Modulation-Doped Si Epilayers
Profiling the Deep Levels inSiGe/Si Microstructure by Small-Pulse Deep Level Transient Spectroscopy
Multiphonon Carrier Emission and Capture by Defects in Nanostructures
Adsorption of Antimony on Si(113) Surfaces: Ab-Initio Calculations and STM Investigations
Enhanced Impurity Solubility and Diffusion Near Surfaces
A Correlation between Compositional Fluctuations and Surface Undulations in Strained Layer Epitaxy
Si/Ge Ordered Interface: Structure and Formation Mechanism
Spin Dependent Recombination and EPR of Surface Paramagnetic Centers in Crystalline and Porous Silicon
Variation of 2DEG-Properties on Hetrointerface Caused by the Surface Defects Recharging
Stucture of the Pb Center: Endor Investigation
High Quality GaAs on Si Grown by CBE
Control of Defects in GaAs/GaInP Interface Grown by MOVPE
Ab Initio Study of Cl Impurity at GaAs Surfaces
Influence of Dislocations on the Transport Properties of Two Dimensional Electron Gas in the Quantum Regim
High-Performance Al(Ga)As/GaAs Resonant Tunneling Diodes Achieved by the Control of Structural Defects at the Interface
Strain Characterization of Hg1-xFexSe-Layers by Electron Spin Resonance
Photoreflectance, Reflectivity and Photoluminescence of MOVPE Grown ZnSe/GaAs Epilayers and ZnSeS/ZnSe Superlattices
Photoinduced Defects in CdS-Doped Glasses
Electronic Structure of Erbium Centers in Silicon
Erbium in Silicon: A Defect System for Optoelectronic Intergrated Ciricuits
Excitation of Rare Earths in Semiconductors by the Excitonic Auger Recombination
Optical and Electrical Properties of Si:Er Light-Emitting Structures
Light Emission from Er-Implanted Silicon Using Anodization
Erbium Related Centers in CZ-Silicon
Electrically Active Centers in Silicon Doped with Erbium
Erbium Doping to P-Based III-V Semiconductors by OMVPE with TBP as a Non-Toxic P Source
Total Energy Calculation for Er Impurity in GaAs
Estimation of Rare-Earth Energy Levels in the Bandgap of Semiconductors
Characteristics of Er-Oxygen Complex Centers in GaAs
Pressure-Induced Increase of the Intra-4f Luminescence of GaAs:Er,O at Room Temperature
Relaxation of Yb 4f-Shell in In(P,As) Alloys
The Importance of Auger Effect on the Efficiency of Er-Related Luminescence in InP:Er
Investigation of Er-Related Centers in Doped GaP
High Resolution DLTS Studies of Transition-Metal-Related Defects in Silicon
Ab-Initio Total Energy Calculations and the Hyperfine Interaction of Interstitial Iron in Silicon
Substitutional Transition Metal Defects in Silicon Grown-In by the Float Zone Technique
Interaction of Iron Donor with Transition-Metal Impurities in Silicon
Lithium-Gold-Related Photoluminescence in n-Type Silicon
Copper Species in Ultra-Pure Germanium Crystals
Zeeman Spectroscopy and Crystal-Field Model of Neutral Vandium in 6H-Silicon Carbide
Electronic Properties of GaAs Doped with Copper
Zeeman Spectroscopy of Transition Metals in Hexagonal GaN
Paramagnetic Resonance of the Neutral Maganese Acceptor in GaP
Piezo-Spectroscopic Study of the V3+ Photoluminescence in GaP:V:S
Electron Paramagnetic Resonance of the Mn-Impurity in ZnS Nanocrystals
Zeeman Splitting and Isotope Shift of Optical Transitions at Ni2+ Centers in Cubic ZnS
Energy States of Ni and Band Offsets in Zn1-xCdxSe(Ni) and ZnSxSe1-x(Ni) Alloys
Intermdiately Bound Excitons in Wurtzit Type Semiconducturs Doped with Transition Metal Impurities
Iron and Nickel as Centers of Nonradiative Recombination in ZnS and ZnSe
Nonlinear Zeeman Behaviour of Copper Centers in ZnS and CdS
Electron Paramagnetic Resonance and Optical Studies of Vanadium-Doped ZnTe
The Titanium and Vanadium Donor in CdTe
Peculiarities of Interstitial Carbon and Di-Carbon Defects in Si
The NNO Defect in Silicon
Generation of Deep Level by Nitrogen Diffusion in Si
A First-Priciples Study of Carbon Impurities in GaAs and InAs
Novel Properties of Hydrogen-Containing Complexes Revealed by their Hydrogen Vibrations
Hydrogen Incorporation and Interaction with Impurities and Defects in Silicon Investigated by Photoluminescence Spectroscopy
A Hydrogen-Related Defect in Polycrystalline CVD Diamond
Dynamics of Hydrogen in Si and GaAs: Results from Muonium Experiments
Acceptor and Donor Neutralization by Hydrogen in Bulk 6H-SiC
Hydrogen States and Passivation in Silicon
Endor Identification of a Hydrogen-Passivated Thermal Donor
Hydrogen Passivation of the Sulfur Double Donor in Silicon Investigated by EPR and ENDOR
Hydrogen Passivation of Iron-Related Hole Traps in Silicon
Boron Neutralization in Epitaxial Si Films Grown by Photo-CVD at Very Low Temperature (≦ 200°C)
Screening Effect of Binding of P-Si-H Complex in Silicon
The H2* Defect in Crystalline Germanium
A Theoretical Study of the B-H and Al-H Complexes in Si
Calculations of the Neutral and Charged States of the {H,C} Pair in Silicon
Structural and Electronic Properties of Carbon-Hydrogen Complex in Silicon
Stability and Defect Reaction of Two Hydrogen-Carbon Complexes in Silicon
Carbon-Hydrogen Deep Level Luminescence Centre in Silicon Responsible for the T-Line
Optical Absorption due to Vibration of Hydrogen-Oxygen Pairs in Silicon
Theory of the NiH2 Complex in Si and the CuH2 Complex in GaAs
Hydrogen Induced Defects in Cobalt Doped Silicon
H Interacting with Intrinsic Defects in Si
Formation of Hydrogen-Oxygen-Vacancy Complexes in Silicon
Metastability and Negative-U Properties for Hydrogen-Related Radiation-Induced Defect in Silicon
Interstitial Hydrogen and the Dissociation of C-H Defects in GaAs
Hydrogen Induced Degradation in Heavily Carbon-Doped GaAs Diodes
Acceptor-Hydrogen Complexes in InAs
Vacancy- and Acceptor- H Complxes in Inp
Investigation of the Manganese-Hydrogen Complex in Inp
First-Principles Calculation on Hydrogen Passivation Mechanism in Mg Doped GaN
Acceptor-Hydrogen Interaction in Ternary III-V Semiconductors
Upconversion Induced by Deep Defects in GaAs
Negative Effective-U and positive Effective-U Nature of the Bistable Dangling-Bonds in a-Si, a-Si:H and c-Si Studied by ab Initio Molecular-Dynamics Simulation
New Bistable Oxygen-Related Complex in Silicon
Theoretical Modelling of Donor Metastable States in n-Type Gallium Arsenide
Donor Metastable States and the Polaron Effect in n-Type Gallium Arsenide
A New Type of Metastability due to Donors in GaAs
Nonradiative Investigations of Photoquenching and Recovery of EL2 Defect Levels in Si-GaAs
The Role of a 70-80 me V Acceptor in the Photoquenching of EL'
Holes Induced by Strong Near Band Gap Light in GaAs:O. EL2 Related?
Metastable Photogenerated Effects in Low Resistivity GaAs
Introduction of Metastable Vacancy Defects in Electron Irradiated Semi-Insulating GaAs
Arsenic Antisite-Arsenic Vacancy Complex and Gallium Vacancy in GaAs: A Kind of Bistability Pair of Intrinsic Defects?
Electronic Properties and Introduction Kinetics of a Metastable Radiation Induced Defect in n-GaAs
Local Structure of the DX Center in AlGaAs: Results from Positron Spectroscopy
Direct Experimental Evidence of Autolocalization Nature of DX-Centers
Magneto-Optical and EPR Investigation of Ionized DX Centers in Te-Doped AlxGa1-xAs
Silicon-Related Local Vibrational Mode Absorption in Bulk AlGaAs
A Bistable Defect in Si-Doped Al0.3Ga0.7As
Use of Bistable Centers in CdF2 in Holographic Recording
Structural Study of Degraded II-VI Blue-Light Emitters
Evidence for High Vacancy Concentrations in Heavily Doped N-Type Silicon from Mossbauer Experiments
Analysis of the Recombination-Active Region Around Extended Defects in Silicon
Photoluminescence of Ring-Distribution of Oxygen Precipitates in Czochralski Silicon
Positron Lifetime in Si Multivacancies
Frenkel Defects in Low Temperature e-- Irradiated Ge and Si Investigated by X-Ray Diffraction
On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C.
Defects in NTD MCZ Si Doped with Magnesium
Irradiation Temperature Dependence of Residual Defects in 17MeV-Proton Bombarded Silicon
Study of Defect Behavior in Ion-Implanted Si Wafers by Slow Positron Annihilation Spectroscopy
Extended Defect Formation in Silicon and Germanium Induced by Light Gas Ion Irradiation Studied with Transmission Electron Microscopy
A Positron Lifetime Study of Defects in Plastically Deformed Silicon
Increase of Electrical Activity of Dislocations in Si during Plastic Deformation
Electronic States Associated with Straight Dislocations in P-Type SiliconStudied by Means of Electric-Dipole Spin Resonance
Energy States of Deformation-Induced Dislocations in Silicon Crystals
Cathodoluminescence Study on Dislocation-Related Luminescence in Silicon
Precipitation of Cu, Ni and Fe on Frank-Type Partial Dislocations in Czochralski-Grown Silicon
Effect of Transition Metal Impurities on the Photoluminescence of Deformed Si Crystal
New Effect of Interaction between Moving Dislocation and Point Defects in Silicon
Computer Simulation Study on Dislocation Motion in Semiconductors
Scratch-Related Effects on Silicon Surface
Study of Electron Irradiation-Induced Defects of 3c-SiC and Diamond by Ultra-High Voltage Electron Microscopy
Study on the Irradiation Induced Defects in 6H-SiC
Vacancy Type Defects inGaAs After Electron Irradiation Studied by Positron Lifetime Spectroscopy
Ga-Vacancies and AsGa-Antisites in Electron Irradiated GaAs
Frenkel Pairs and PIn Antisites in Low Temperature Electron Irradiated InP
Generation of Point Defects during Plastic Deformation of InP
Category II and Category III Defects in 200 KEV Fe Implanted InP
Clustering Process of Point Defects in GaP Studied by Transmission Electron Microscopy
Hg Vacancies in Hg1-xCdxTe Studied by Positron Annihilation
ESR Study of a-Ge1-xNx Prepared by Magnetron Sputtering
First Principles Investigation of Vacancy Oxygen Defects in Si
Oxygen Complexing with Group II Impurities in Silicon
Models of Oxygen Loss and Thermal Donor Formation in Silicon by the Clustering of Rapidly Diffusing Oxygen Dimers
Effect of Carbon on Thermal Double Donor Formation in Silicon
Anomalous Fast Annihilation of Thermal Donors in Carbon-Rich Silicon
Ab-Initio Total Energy Calculation and the Hyperfine Interactions of Iron-Acceptor Pairs in Silicon
The Structure and Bonding of Iron-Acceptor Pairs in Silicon
Ab Initio Study on Fe-Acceptor Pairing in Silicon
Photo-Induced Iron Atom Motion of Iron-Acceptor Pairs in Silicon
Recombination-Enhanced Migration of Interstitial Iron in Silicon
The Origin of the Low-Spin Ground State for Trigonal Fei-AuSi and Fei-AgSi Pairs in Silicon
The Atomic Stucture of Mn4 Clusters in Silicon
Perturbed Angular Correlation Study of Impurities Interaction in Si
TDS and RB Studies of Ar Implanted to Si
Reactions between Point Defects in Silicon Doped with Germanium
Influence of Intrinsic Elastic Stresses on the Interaction between Point Defects in Si
Surface Recombination in Semiconductors
Reactivation Kinetics of Lithium-Passivated Acceptors inGaAs
Reactivation of Si Donors and Zn Acceptors in Plasma-Irradiated GaAs by Reverse Bias Annealing
Mechanism of Deep Penetration of Plasma-Induced Defects inGaAs: Minority Carrier Injection Effect
Impurity-Defect Complexes in Neutron Transmutation Doped Gallium Arsenide and Germanium Crystals
PAC-Investigations of the Donor-Defect Interaction in III-V Compound Semiconductors with the Probe 77Br(77Se)
Scanning Tunneling Spectroscopic Studies of GaAs Doped with Si
Thermal Precipitation of Excess Arsenic on Dislocations in LEC Grwon GaAs Crystal
Optically Induced Anneal of GaAs and AlGaAs Layers
Electron-Irradiaton Induced Defects in Fe-Doped Semi-Insulating InP
Deformation-Induced Defects in GaSb
Damages in AlGaAs/GaAs Heterostructures Induced by KeV-Electron-Beam Irradiation
TEM Investigation of Point Defect Interactions in II-VI Compounds
Athermal Motion of Donors under Ultrasound in CdS Crystals
Chemical Identification on the Atomic Scale in MBE-Grown III-V Alloy Semiconductors
Positron-Annihilation 2D-Acar Study of Divacancy and Vacancy-Oxygen Pairs in Si
Defect Studies with Isotopically Designed Semiconductors
The Chemical Identification of Defect Impurities Using Radioactive Isotopes
Radioactive Isotopes in Photoluminescence Experiemts: Identification of Defects Levels
Electrical Detection of Electron Paramagnetic Resonance: Studies of the Mechanism of the Spin-Dependent Recombination Process
The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
Novel Very Slow Photoluminescence Processes at Transition Metal Ions in III-V Semiconductors
Frenkel Pairs in INSB Induced by Neutrino Recoil and Observed by Mössbauer Spectroscopy
High Sensitivity Detection of Silicon Surface Reactions by Photoconductance Decay
New Experimental Methods of Detection the Paramagnetic Recombination Centers in Silicon P-N Junctions and Diodes
Poole-Frenkel Ionization of Ge:Hg in Terahertz Electromagnetic Fields
Raman Image Study of Defects in Ion-Implanted and Post-Annealed Silicon
Determination of High Relative Deep Level Concentrations in DLTS
Generation of Ultra-High Acceleration Field for New Extreme Condition Science
Phonon Spectroscopy of Low-Energy Excitations of Defects in Semiconductors
Local Vibrational Modes of 3d Elements in Wurtzite Type ZnO and GaN Crystals
Anharmonicity of The CAsLocal Oscillator in Gallium Arsenide
Calculation of Local Vibrational Modes at Point Defects in Semiconductors
The Migration of Carbon and Self Interstitials in Silicon
Anomalous Diffusion of Phosphorus in Silicon by Pair Diffusion Model and Decrease in Quasi Vacancy Formation Energy
Electric-Dipole Spin Resonance of Defects Correlated with the Diffusion of ZN Into SI
Enhanced Diffusion of Impurities into Solids by Electron Beam Doping
Interstitials in Silicon Produced by Electron Beam Doping (Superdiffusion)
Electron Energy Dependennce of Impurity Concentrations in Semiconductors by Electron Beam Doping (Superdiffusion)
Surface Diffusion of Atoms by Electron Beam Doping (Superdiffusion)
Dopant Diffusion and Stacking Fault in Silicon during Thermal Oxidation
Influence of Simultaneously Implanted As+ Ions on Diffusivity and Activation Efficiency of B Atoms Implanted into Silicon
Effects of Background Doping Level on ZN Diffusion in GaAs/AlGaAs Multiple-Quantum-Well Structures
Study of The Compensating Centres in GaAs:Te by Positron Annihilation
Time-of-Flight in Lithium-Compensated GaAS
The Influence of the Zinc Concentration on Defect Characteristics of InP
Influence of Intrinsic Defects on the Electronic Structure of Non-Stoichiometric CuInS2 Chalcopyrite Semiconductors
Defects in Porous Silicon: A Study with Optical and Spin Resonance Methodes
Oxygen Related Defect Centers: the Source of Room Temperature Red Photoluminescence in As-Made and Oxidized Porous Silicon
Review of the Influence of Micro Crystal Defects in Silicon Single Crystals on Gate Oxide Integrity
Fundamentals of Point Defect Aggregation and Dissolution Phenomena of Crystal Originated Defects in Czochralski Silicon
Nature of D-Defect in CZ Silicon: D-Defect Dissolution and D-Defect Related T.D.D.B
Relationship between Grown-In Defects and Thermal History during CZ Si Crystal Growth
Growth Parameters Determining the Type of Grown-In Defects in Czockralski Silicon Crystals
Effect of Magnetic Field and Heat Treatment on the Grown-in Defects in MCZ Si Single Crystals
Annealing Behavior of a Ligth ScatteringTomography Detected Defect near the Surface of Si Wafers
Influence of Point Defect Concentration in Growing CZ-SI on the Formation Temperature of the Defects Affecting Gate Oxide Integrity
Genration of Oxidation Induced Stacking Faults in CZ Silicon Wafers
Relation between Minute Lattice Strain and Anomalous Oxygen Precipitation in a Czochralski-Grown Silicon Crystal
Photoluminescence Due To Oxygen Precipitates Distinguished from the D Lines in Annealed Si
Lattice Defects in High Quality As-Grown CZ Silicon, Studied with Ligth Scattering and Preferential Etching Techniques
Microdefects in Nitrogen Doped FZ Silicon Revealed by Li+ Drifting
Influence of Al Doping on Deep Levels in MBE GaAs
Deep Donor - Acceptor Correlations in Low Temperature GaAs
Dislocation Reduction of GaAs and AIGaAs on Si Substrate for High Efficiency Solar Cell
Spatial Distribution of Microdefects around Dislocations in Si-Doped GaAs
Study of the Dislocation Atmospheres in N-Type GaAs by DSL Photoetching, EBIC and Microraman Measurements
Study of Gallium and Antimony Cluster Formation în GaSb Bulk Crystals Grown from Nonstoichiometric Melts
TEM Evaluation of Ordered and Modulated Structures in MBE-Grown InAlAs Crystals on (110)InP
SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen
Measurements of Polishing-Induced Residual Damages in Silicon Wafers Using Noncontact Photoconductivity Amplitude Technique
Lifetime Identification of Thermal Oxidation Process Induced Contamination in Silicon Wafers
Transmission Electron Microscopy of LatticeDefects in CZ-Silicon Wafer Formed by Two-Stage Annealing
Rhombic Aggregation of Dislocations in CZ-Si Crystal
Study of Near-Surface Microdefects in Czochralski-Si Wafers After a CMOS Thermal Process
Subsurface Damage in Single Diamond Tool Machined SI Wafers
Interface Defects of Bonded Silicon Wafers
Direct Bonding of Silicon Wafers with Grooved Surfaces: Characterization of Defects and Application to High Power Devices
Oxygen Precipitation in CZ Silicon Crystals Contaminated with Iron
Evaluation Method of Precipitated Oxygen Concentration in Low Resistivity Silicon Wafers Using X-Ray Diffration
Precipitates in Antimony Implanted Silicon
Secondary Defects and Deep Levels in N-Si Induced by High Energy P Ion Implantation
High Energy Si, Zn and Ga Ion Implantation into GaAs on Si
Local Structure Analysis around Arsenic Implanted into Silicon by XAFS Technique
Effects of Si3N4 Films on Diffusion of Boron and Extended Defects in Silicon during Post-Implantation Annealing
Photoluminescence Defect Diagnostics in Poly-Si Thin Films
DLTS of Polysilicon Emitter Solar Cells
Photoluminescence Study on Point Defects in SIMOX Buried SiO2 Film
Spin-Dependent Transport in SiC and III-V Semiconductor Devices
Room Temperature Defect Etching of III-V Compounds and Alloys Grown on Si Substate Using Hydrogen Fluoride and Nitric Acid
ODMR Investigation of Near-Surface Damage Induced by Dry-Etching Process Using GaAs/AlAs Quantum Well Structures
Novel Technique for Reliable AlGaAs/GaAs Light Emitting Diodes on Si Using GaAs Islands Active Regions
Thermal and Athermal Migration of Ion-Irradiation Defects in Al0.3Ga0.7As/GaAs Heterostructures
Characterization of Mg+F, Mg+Ar Dual Ion Implanted AlxGa1-xAs(0≤x≤0.75) Layers
Atomic-Scale Studies of Point Defects in Compound Semiconductors by Scannig Tunneling Microscopy
Electrical and Defect Characterization of Sputter Deposited Au and Cr Schottky Barrier Diodes on GaAs
Optical and Electrical Characterisation of He Plasma Sputtered n-GaAs
Contamination and Cleaning of GaAs-(100) Surfaces
Characterization of Electron Traps in n-InP Induced by Hydrogen Plasma
Gettering of Transition Metals in Multicrystalline Silicon
Substitutional Gettering of Platinum by Diffusion into Ion-Beam Damaged Silicon
Gettering of Iron Using Electrically Inactive Boron Doped Layer
Ab Initio Calculation for G-Values of ESR Centers in a-Si:H
Defects in Semiconductors 18
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