Gettering and Defect Engineering in Semiconductor Technology

Author: Grimmeiss Hermann G.; Kittler Martin; Richter Hans  

Publisher: Trans Tech Publications‎

Publication year: 1993

E-ISBN: 9783035706505

P-ISBN(Paperback): 9783908450009

Subject: L No classification

Keyword: 暂无分类

Language: ENG

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Chapter

Mechanisms of Transition Metal Gettering in Silicon

Gettering in Silicon under Vacancy Generation Conditions

Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers

Defect Engineering in Erbium-Doped Silicon Structure Technology

PN Junction Formation by Two Steps Annealing

Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions

Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile

On the Interaction of Transition Metals with Silicon Grain Boundaries

Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma

Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE

Misfit Strain Engineering in Heteroepitaxial Structures

Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures

Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)

Properties of Hydrogen, Oxygen and Carbon in Si

Solubility of Hydrogen in Silicon at High Temperatures

Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C

Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature

Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content

New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon

Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface

The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD

Annealing Properties of N-Doped Cz-Si Crystals

Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study

Formation and Properties of Tetranuclear Clusters of Manganese in Silicon

EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon

Investigation of Deep Levels and Carrier Dynamics in SiC Films

Process-Induced Defects in Silicon Technology

Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics

Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide

Dopant Migration Caused by Point Defect Gradients

Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory

Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon

Electric-Dipole Spin Resonance on Extended Defects in Silicon

Luminescence of Dislocations in SiGe/Si Structures

On the Nature of Dislocation Luminescence in Si and Ge

Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure

Properties of Dislocations and Point Defects in Fz-Si

Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures

Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals

Cu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial Layers

Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures

The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device

Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon

UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology

Formation of High Quality SiGe/Si Heterostructures

Liquid Phase Epitaxy of SiGe Structures

Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio

Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers

Deposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System

Misfit Dislocations in Strained Layer Epitaxy

Stress Relaxation Mechanisms by Dislocations in the System Ge on Si

Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems

Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates

Equilibrium Configuration of Misfit Dislocations in Graded Buffers

Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon

Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices

Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures

Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)

Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures

Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments

Application of Electron Microscopy to Semiconductor Materials Research

X-Ray Analysis of Strained Layer Configurations

In Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon Substrate

Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures

Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction

New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures

Detection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded Buffer

HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals

TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System

Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures

Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices

Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si

Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes

Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements

Investigation of Recombination Properties of Ti Double Donor in Si

Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems

The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations

Author Index

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