Chapter
Mechanisms of Transition Metal Gettering in Silicon
Gettering in Silicon under Vacancy Generation Conditions
Phosphorus External Gettering Efficiency in Multicrystalline Silicon Wafers
Defect Engineering in Erbium-Doped Silicon Structure Technology
PN Junction Formation by Two Steps Annealing
Generation of the P-Induced Misfit Dislocations during the Diffusion in Silicon: Analytical Determination of the Criticy Conditions
Processes of Defect Formation and Gettering under Dry Etching of Si and GaAs and Measurements of Diffusion Length Profile
On the Interaction of Transition Metals with Silicon Grain Boundaries
Dry Cleaning of Silicon Wafers in a Low Energy Hydrogen Plasma
Reduction of Interfacial Carbon and Boron Contamination as Sources for Degradation of Epitaxial SiGe Layers Grown by MBE
Misfit Strain Engineering in Heteroepitaxial Structures
Surfactant-Mediated MBE of Strained-Layer III-V Semiconductor Heterostructures
Transition Metal Gettering in Poly-Silicon for Photovoltaic Applications (Abstract)
Properties of Hydrogen, Oxygen and Carbon in Si
Solubility of Hydrogen in Silicon at High Temperatures
Effect of Oxygen Concentration on the Kinetics of Oxygen Loss and Thermal Donor Formation in Silicon at Temperatures between 350° C and 500° C
Evolution of Oxygen Clusters and Agglomerates in Annealed Cz-Si at High Pressure - High Temperature
Peculiarities in the Defect Behavior in Heat-Treated Cz-Si with a Low and High Oxygen Content
New Evidences about Carbon and Oxygen Segregation Processes in Polycrystalline Silicon
Oxygen and Copper Precipitation at the Silicon/Silicon Dioxide Interface
The Role of Oxygen for Defect Formation in Oxygen-Rich Si- and Si1-xGex - Layers on Silicon Grown by APCVD
Annealing Properties of N-Doped Cz-Si Crystals
Oxygen-Related Clusters of Platinum in Silicon - an Electron Spin Resonance Study
Formation and Properties of Tetranuclear Clusters of Manganese in Silicon
EPR Identification of the Different Charge States of the Iron-Acceptor Pairs in Silicon
Investigation of Deep Levels and Carrier Dynamics in SiC Films
Process-Induced Defects in Silicon Technology
Lattice Defects Induced in Si1-xGex Diodes by 1-MeV Electron Irradiation and their Influence on Electrical Characteristics
Non-Equilibrium Impurity Diffusion in Silicon and Silicon Carbide
Dopant Migration Caused by Point Defect Gradients
Vacancy Assisted Diffusion of Si in GaAs: Microscopic Theory
Investigation of Defect Generation and Precipitation in Antimony Implanted Silicon
Electric-Dipole Spin Resonance on Extended Defects in Silicon
Luminescence of Dislocations in SiGe/Si Structures
On the Nature of Dislocation Luminescence in Si and Ge
Defect Electrical Activity Study Using a Si(Ge) Heteroepitaxial Structure
Properties of Dislocations and Point Defects in Fz-Si
Metastable States Associated with Interfacial MISFIT Dislocations in Si/Si(Ge) Heterostructures
Experimental Study of Anomalous Dislocation Kinks Drift in Germanium Single Crystals
Cu Precipitation in Strained and Relaxing GexSi1-x Heteroepitaxial Layers
Peculiarities of Defect Formation in SiGe/Si and SiGe/Ge Heterostructures
The Influence of Oxidation Induced Stacking Faults on Electrical Parameters of a CCD Device
Metals, Oxide Precipitates and Minority Carrier Lifetime in Silicon
UHV-VLPCVD Heteroepitaxial Growth of Thin SiGe-Layers on Si-Substrates: Influence of Pressure on Kinetics and on Surface-Morphology
Formation of High Quality SiGe/Si Heterostructures
Liquid Phase Epitaxy of SiGe Structures
Planar Defects and Misfit Dislocations in (001) GaAs/Ge Heterostructures MOCVD Grown with Different V/III Ratio
Solvents Influencing the Morphology of Epitaxial Solution-Grown Strained Ge/Si Layers
Deposition and P Doping of Si(1-x)Gex Layers in a Conventional Horizontal Tube APCVD Reactor without Load Lock System
Misfit Dislocations in Strained Layer Epitaxy
Stress Relaxation Mechanisms by Dislocations in the System Ge on Si
Strain Relaxation and Threading Dislocation Density in Lattice-Mismatched Semiconductor Systems
Relaxation Phenomena in Strained Si1-xGex Layers on Planar and Differently Patterned Si Substrates
Equilibrium Configuration of Misfit Dislocations in Graded Buffers
Evolution of Amorphous/Crystalline Interfacial Roughness and End-of-Range Defects during Solid-Phase Epitaxial Regrowth of Ge Implaned Silicon
Investigations of 2D Hole Gas in Strained Ge-Ge1-xSix Superlattices
Photoluminescence of 2D-Excitons in Ge Layers of Ge-Ge1-xSix Multiple Quantum Well Structures
Strained Quaternary Compounds GaInAsP/InP for Infrared Laser (1.5µm)
Persistent Decrease of Dark Conductivity due to Illumination in AlGaAs/GaAs Modulation-Doped Heterostructures
Photoelectrical Interface Processes in Multilayer-Type Heterostructures Based on Silicon, II-VI Compounds and Photosynthetic Pigments
Application of Electron Microscopy to Semiconductor Materials Research
X-Ray Analysis of Strained Layer Configurations
In Situ X-Ray Investigation of Relaxation Processes in Si1-xGex Layers on Silicon Substrate
Determination of Superlattice Structural Parameters in Mismatched Epitaxial Structures
Investigation of Strain in Si1-xGex/Si Heterostructures and Local Isolation Structures by Convergent Beam Electron Diffraction
New Applications of Diffraction Analysis for Dislocation Structure in High Lattice-Mismatch MBE Grown Epitaxial Structures
Detection of Threading Dislocations by EBIC in a SiGe Epilayer with Graded Buffer
HREM and DLTS of Σ37(610) and Σ29(520 )[001] Tilt Grain Boundaries in Ge Bicrystals
TEM In Situ Investigations of Interfacial Processes in the Pd/a-GeSi System
Micro-Raman Investigations of Elastic and Plastic Strain Relief in Si1-xGex-Heterostructures
Raman Study of the Phonon-Plasmon Modes in the Short Period GaAs/AlAs Superlattices
Positron Annihilation on Thermal Defects in Cz-Si and Fz-Si
Characterization of MBE Grown Si/Si1-xGex/Si Structures Using n+p-Diodes
Investigations on Surface and Bulk Semiconductor Properties Using Wavelength Dependent TRMC Measurements
Investigation of Recombination Properties of Ti Double Donor in Si
Mapping Interfacial Roughness and Composition in Elemental Semiconductor Systems
The Influence of the Electron Subsystem Excitation on the Kinetics and Dynamics of Dislocations