Chapter
Challenges in Large-Area Multi-Wafer SiC Epitaxy for Production Needs
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Investigation of In-Grown Dislocations in 4H-SiC Epitaxial Layers
4H-SiC Epitaxial Growth on Carbon-Face Substrates with Reduced Surface Roughness
SiC Warm-Wall Planetary VPE Growth on Multiple 100-mm Diameter Wafers
Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process
Lower-Temperature Epitaxial Growth of 4H-SiC Using CH3Cl Carbon Gas Precursor
Investigation of the Mechanism and Growth Kinetics of Homoepitaxial 4H-SiC Growth Using CH3Cl Carbon Precursor
Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor
SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor
Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates
High Epitaxial Growth Rate of 4H-SiC Using Horizontal Hot-Wall CVD
Homoepitaxial Growth and Characterization of 4H-SiC Epilayers by Low-Pressure Hot-Wall Chemical Vapor Deposition
Highly Uniform SiC Epitaxy for MESFET Fabrication
Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization
High Purity SiC Epitaxial Growth by Chemical Vapor Deposition Using CH3SiH3 and C3H8 Sources
Selective Etching of Micropipes During Initial Homoepitaxial Growth Stage on Nearly On-Axis 4H-SiC Substrates
Proposal of the Thermal Equilibrium Model for SiC Hydrogen Etching Phenomena
Homoepitaxial Growth of Iron-Doped 4H-SiC Using BTMSM and t-Butylferrocene Precursors for Semi-Insulating Property
Epitaxial Growth of 4H-SiC on 4º Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD
Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition
Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC
Comparison of Propagation and Nucleation of Basal Plane Dislocations in 4H-SiC(000-1) and (0001) Epitaxy
Ab Initio Studies of the Surface Reaction of Si2C and SiC2 with Si on the 4H-SiC (000-1) Surface
Thick Epitaxial Layers on 4º Off-Oriented 4H-SiC Suited for PiN-Diodes with Blocking Voltages above 6.5 kV
Growth of Low Basal Plane Dislocation Density SiC Epitaxial Layers
Experimental Observations of Extended Growth of 4H-SiC Webbed Cantilevers
SiC Migration Enhanced Embedded Epitaxial (ME3) Growth Technology
CVD Epitaxial Growth of 4H-SiC on Porous SiC Substrates
Studies on Selective Growth and In Situ Etching of 4H-SiC Using a TaC Mask
6H-SiC Homoepitaxial Growth and Optical Property of Boron- and Nitrogen-Doped Donor-Acceptor Pair (DAP) Emission of 1º-Off Substrate by Closed-Space Sublimation Method
Epitaxial Growth of 4H-SiC (0001) by Sublimation Method Using Horizontal Furnace
Using Vapour-Liquid-Solid Mechanism for SiC Homoepitaxial Growth on on-axis α-SiC (0001) at Low Temperature
Improvement of 4H-SiC Selective Epitaxial Growth by VLS Mechanism Using Al and Ge Based Melts
2.2 Heteropolytypic and Heteroepitaxial Growth
Relaxation Mechanism of the Defect-Free 3C-SiC Epitaxial Films Grown on Step-Free 4H SiC Mesas
Structure Evolution of 3C-SiC on Cubic and Hexagonal Substrates
Single-Domain 3C-SiC Epitaxially Grown on 6H-SiC by the VLS Mechanism
‘Switch-Back Epitaxy’ as a Novel Technique for Reducing Stacking Faults in 3C-SiC
Growth Acceleration in FLASiC Assisted Short Time Liquid Phase Epitaxy by Melt Modification
Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD
Selective Epitaxial Growth of 3C-SiC on Si Using Hexamethyldisilane in a Resistance Heated MOCVD Reactor
Growth of 3C-SiC on Si Molds for MEMS Applications
Nitrogen-Doping of Polycrystalline 3C-SiC Films Deposited by Low Pressure Chemical Vapor Deposition
Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
3.1 Extended Defects: Stacking Faults and Dislocations
Theory of Dislocations in SiC: The Effect of Charge on Kink Migration
Structure of Carrot Defects in 4H-SiC Epilayers
Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
Silicon Carbide: A Playground for 1D-Modulation Electronics
Peierls Barriers and Core Properties of Partial Dislocations in SiC
Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes
Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes
Performance of Silicon Carbide PiN Diodes Fabricated on Basal Plane Dislocation-Free Epilayers
Observation of Shrinking and Reformation of Shockley Stacking Faults by PL Mapping
Investigation of Mechanical Stress-Induced Double Stacking Faults in (11-20) Highly N-Doped 4H-SiC Combining Optical Microscopy, TEM, Contrast Simulation and Dislocation Core Reconstruction
Overlapping Shockley/Frank Faults in 4H-SiC PiN Diodes
Examining Dislocations in SiC Epitaxy by Light Emission from Simple Diode Structures
Photoemission of 4H-SiC pin-Diodes Epitaxied by the Sublimation Method
Investigation of Structural Stability in 4H-SiC Structures with Heavy Ion Implanted Interface
Origin of Surface Morphological Defects in 4H-SiC Homoepitaxial Films
Structure of “Star” Defect in 4H-SiC Substrates and Epilayers
Synchrotron X-ray Topographic Analysis of Dislocation Structures in Bulk SiC Single Crystal
Simulation of Threading Edge Dislocation Images in X-Ray Topographs of Silicon Carbide Homo-Epilayers
Development of Non-Destructive In-House Observation Techniques for Dislocations and Stacking Faults in SiC Epilayers
Why Are Only Some Basal Plane Dislocations Converted to Threading Edge Dislocations During SiC Epitaxy?
3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method
Effect of Crystal Defects on Reverse I-V Characteristics of 4H-SiC APDs
Structural Defects and Critical Electric Field in 3C-SiC
Giant Burgers Vector Micropipe-Dislocations in Silicon Carbide Investigated by Atomic Force Microscopy
Open Core Dislocations and Surface Energy of SiC
Comparison between Measurement Techniques Used for Determination of the Micropipe Density in SiC Substrates
A New Method of Mapping and Counting Micropipes in SiC Wafers
Identification of Polytypes in Sublimation Grown 4H-SiC Crystals by High Resolution X-Ray Diffractometry
Optical Studies of Deep Centers in Semi-Insulating SiC
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
High Energy Local Vibrational Modes of Carbon Aggregates in SiC: Experimental and Theoretical Insight
Non-Equilibrium Carrier Diffusion and Recombination in Semi-Insulating PVT Grown Bulk 6H-SiC Crystals
Origin of the Up-Conversion Process in 4H SiC
A Combined Photoluminescence and Electron Paramagnetic Resonance Study of Low Energy Electron Irradiated 4H SiC
Investigation of the Displacement Threshold of Si in 4H SiC
Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy
Deep Level Defects Related to Carbon Displacements in n- and p-Type 4H-SiC
Deep Traps and Charge Carrier Lifetimes in 4H-SiC Epilayers
Deep Electron and Hole Traps in 6H-SiC Bulk Crystals Grown by the Halide Chemical Vapor Deposition
Deep Hole Traps in As-Grown 4H-SiC Epilayers Investigated by Deep Level Transient Spectroscopy
Deep Level near EC – 0.55 eV in Undoped 4H-SiC Substrates
Deep Traps in High-Purity Semi-Insulating 6H-SiC Substrates: Thermally Stimulated Current Spectroscopy
Quenching Photoconductivity and Photoelectric Memory in 6H-SiC
Deep Level Point Defects in Semi-Insulating SiC
Divacancy and Its Identification: Theory
Divacancy Model for P6/P7 Centers in 4H- and 6H-SiC
Thermal Evolution of Defects in Semi-Insulating 4H SiC
Evidence of the Ground Triplet State of Silicon-Carbon Divacancies (P6, P7 Centers) in 6H SiC: An EPR Study
Signature of the Negative Carbon Vacancy-Antisite Complex
Electron Paramagnetic Resonance Study of the HEI4/SI5 Center in 4H-SiC
Relationship between the EPR SI-5 Signal and the 0.65 eV Electron Trap in 4H- and 6H-SiC Polytypes
Carbon Related Split-Interstitials in Electron-Irradiated n-type 6H-SiC
Identification of the Triplet State N-V Defect in Neutron Irradiated Silicon Carbide by Electron Paramagnetic Resonance
Possible Role of Hydrogen within the So-Called X Center in Semi-Insulating 4H-SiC
Trapping Recombination Process and Persistent Photoconductivity in Semi-Insulating 4H SiC
Identification of Deep Level Defects in SiC Bipolar Junction Transistors
Vacancy Defects Induced by Low Energy Electron Irradiation in 6H and 3C-SiC Monocrystals Characterized by Positron Annihilation Spectroscopy and Electron Paramagnetic Resonance
Clustering of Vacancies in Semi-Insulating SiC Observed with Positron Spectroscopy
3.3.1 Shallow Donors and Acceptors, Hydrogen
Electronic Raman Studies of Shallow Donors in Silicon Carbide
Evidence for Phosphorus on Carbon and Silicon Sites in 6H and 4H SiC
Photoluminescence of Phosphorous Doped SiC
Shallow P Donors in 3C-, 4H- and 6H-SiC
Dependence of the Ionization Energy of Phosphorous Donor in 4H-SiC on Doping Concentration
Donor-Acceptor Pair Luminescence of Phosphorus-Aluminum and Nitrogen-Aluminum Pairs in 4H SiC
A Theoretical Study on Doping of Phosphorus in Chemical Vapor Deposited SiC Layers
New Aspects in n-type Doping of SiC with Phosphorus
Conditions and Limitations of Using Low-Temperature Photoluminescence to Determine Residual Nitrogen Levels in Semi-Insulating SiC Substrates
Evaluating and Improving SIMS Method for Measuring Nitrogen in SiC
Kinetic Mechanisms for the Deactivation of Nitrogen in SiC
Electrical Properties of Undoped 6H- and 4H-SiC Bulk Crystals Grown by Halide Chemical Vapor Deposition
Accurate CsM+ SIMS Aluminum Dopant Profiling in SiC
Results of SIMS, LTPL and Temperature-Dependent Hall Effect Measurements Performed on Al-Doped α-SiC Substrates Grown by the M-PVT Method
In-Diffusion, Trapping and Out-Diffusion of Deuterium in 4H-SiC Substrates
3.3.2 Transition Metals and Rare Earths
Electronic Structure and Magnetic Properties of Transition Metal Doped Silicon Carbide in Different Polytypes
The Optical Admittance Spectroscopy of the Vanadium Donor and Acceptor Levels in Semi-Insulating 4H-SiC and 6H-SiC
Luminescence and EPR Characterization of Vanadium Doped Semi-Insulating 4H SiC
Co-Doping of Er-Doped SiC with Oxygen – A Promising Way Towards Efficient 1540 nm Emission at Room Temperature?
Europium Induced Deep Levels in Hexagonal Silicon Carbide
Cathodoluminescence Measurements and Thermal Activation of Rare Earth Doped (Tb3+, Dy3+ and Eu3+) a-SiC Thin Films Prepared by rf Magnetron Sputtering
3.4 Surfaces and Interfaces
Hydrogen Nanochemistry Achieving Clean and Pre-Oxidized Silicon Carbide Surface Metallization
Temperature Induced Phase Transformation on the 4H-SiC(11-20) Surface
SiC Pore Surfaces: Surface Studies of 4H-SiC(1-102) and 4H-SiC(-110-2)
Experimental Study of the Formation and Oxidation of the Sm/4H-SiC Surface Alloy
Low Energy Ion Modification of 3C-SiC Surfaces
3.5 Fundamental Properties
Phonons in SiC from INS, IXS, and Ab-Initio Calculations
Infrared Reflectance Study of 3C-SiC Grown on Si by Chemical Vapor Deposition
Precise Determination of Thermal Expansion Coefficients Observed in 4H-SiC Single Crystals
Thermal Lens Technique for the Determination of SiC Thermo-Optical Properties
Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC
Characterization of SiC Wafers by Photoluminescence Mapping
Correlation between Room Temperature Photoluminescence and Resistivity in Semiinsulating Silicon Carbide
Simple, Calibrated Analysis and Mapping of SiC Wafer Defects by Birefringence Imaging
SiC Substrate Doping Profiles Using Commercial Optical Scanners
Characterization of SiC Substrates Using X-Ray Rocking Curve Mapping
Microwave Dielectric Loss Characterization of Silicon Carbide Wafers
Chapter 4. Porous SiC, SiC Nanoparticles and Nanowires
Columnar Pore Growth in n-Type 6H SiC
A Comparison of Various Surface Finishes and the Effects on the Early Stages of Pore Formation during High Field Etching of SiC
Brillouin Spectra of Porous p-Type 6H-SiC
Columnar Morphology of Porous Silicon Carbide as a Protein-Permeable Membrane for Biosensors and Other Applications
Novel Polycrystalline SiC Films Containing Nanoscale Through-Pores by Selective APCVD
Sol-Gel Silicon Carbide for Photonic Applications
Formation, Morphology and Optical Properties of SiC Nanopowder
A Simple Method to Synthesize Nano-Sized 3C-SiC Powder Using Hexamethyldisilane in a CVD Reactor
Fabrication and Electrical Transport Properties of CVD Grown Silicon Carbide Nanowires (SiC NWs) for Field Effect Transistor
Thermodynamic Analysis of Synthetic Potentialities of the nSiC + SiO2 Starting System: SiC Gas-Phase Transport via Si(g) and CO(g)
Chapter 5. Processing of SiC
5.1 Implantation and Doping of SiC
Ion Implantation Processing and Related Effects in SiC
Advances in Two-Dimensional Dopant Profiling and Imaging of 4H-SiC Devices
Annealing Behavior of N+-Implantation-Induced Defects in SiC at Low Temperatures
Impact of Annealing Temperature Ramps on the Electrical Activation of N+ and P+ Co-Implanted SiC Layers
Impurity Concentration Dependence of Recrystallization Process of Phosphorus Implanted 4H-SiC(11-20)
Activation Treatment of Ion Implanted Dopants Using Hybrid Super RTA Equipment
Development and Investigation on EBAS-100 of 100 mm Diameter Wafer for 4H-SiC Post Ion Implantation Annealing
Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes
Current Analysis of Ion Implanted p+/n 4H-SiC Junctions: Post-Implantation Annealing in Ar Ambient
Ion Implanted p+/n Diodes: Post-Implantation Annealing in a Silane Ambient in a Cold-Wall Low-Pressure CVD Reactor
Laser Direct Write Doping and Metallization Fabrication of Silicon Carbide PIN Diodes
Extracting Activation and Compensation Ratio from Aluminum Implanted 4H-SiC by Modeling of Resistivity Measurements
Variations in the Effects of Implanting Al at Different Concentrations into SiC
Effect of Surface Orientation and Off-Angle on Surface Roughness and Electrical Properties of p-Type Impurity Implanted 4H-SiC Substrate after High Temperature Annealing
Post-Implantation Annealing in a Silane Ambient Using Hot-Wall CVD
Kick-Out Phenomena in Epitaxially Boron- and Aluminum-Doped 4H-SiC during Implantation and Annealing Processes
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
High Dose High Temperature Ion Implantation of Ge into 4H-SiC
Hydrogen-Induced Blistering of SiC: The Role of Post-Implant Multi-Step Annealing Sequences
An Approach to Improving the Morphology and Reliability of n-SiC Ohmic Contacts to SiC Using Second-Metal Contacts
Ni Graphite Intercalated Compounds in Ohmic Contact Formation on SiC
Ohmic Contact for C-face n-Type 4H-SiC with Reduced Graphite Precipitation
Structural Properties of Titanium-Nickel Films on Silicon Carbide Following High Temperature Annealing
Die Bonding Issues on Silicon Carbide Diodes
Composite Ohmic Contacts to SiC
Tantalum-Ruthenium Diffusion Barriers for Contacts to SiC
Investigation of TiW Contacts to 4H-SiC Bipolar Junction Devices
Characterization of Ti/Al Ohmic Contacts to p-Type 4H-SiC Using Cathodoluminescence and Auger Electron Spectroscopies
Ohmic Contacts to P-Type Epitexial and Imlanted 4H-SiC
Ohmic Contacts on p-Type SiC Using Al/C Films
Ti/AlNi/W and Ti/Ni2Si/W Ohmic Contacts to P-Type SiC
Nanoscale Deep Level Defect Correlation with Schottky Barriers in 4H-SiC/Metal Diodes
A Study of Inhomogeneous Schottky Diodes on n-Type 4H-SiC
Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation
Diffusion Welding Techniques for Power SiC Schottky Packaging
Evaluation of Schottky Barrier Height of Al, Ti, Au ,and Ni Contacts to 3C-SiC
Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes
High Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown
5.3 Oxides and Other Dielectrics
Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances
Nitrogen and Hydrogen Induced Trap Passivation at the SiO2/4H-SiC Interface
Impact of Dislocations on Gate Oxide in SiC MOS Devices and High Reliability ONO Dielectrics
High Channel Mobility 4H-SiC MOSFETs
Improved 4H-SiC MOS Interfaces Produced via Two Independent Processes: Metal Enhanced Oxidation and 1300°C NO Anneal
Characterization of 4H-SiC MOSFETs with NO-Annealed CVD Oxide
Investigation of SiO2-SiC Interface by High-Resolution Transmission Electron Microscope
Interfacial Properties of SiO2 Grown on 4H-SiC: Comparison between N2O and Wet O2 Oxidation Ambient
Effect of Reactive-Ion Etching on Thermal Oxide Properties on 4H-SiC
Improved Dielectric and Interface Properties of 4H-SiC MOS Structures Processed by Oxide Deposition and N2O Annealing
Nitrogen Implantation - An Alternative Technique to Reduce Traps at SiC/SiO2-Interfaces
Process-Dependent Charges and Traps in Dielectrics on SiC
Low-Temperature Post-Oxidation Annealing Using Atomic Hydrogen Radicals Generated by High-Temperature Catalyzer for Improvement in Reliability of Thermal Oxides on 4H-SiC
Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces
On Separating Oxide Charges and Interface Charges in 4H-SiC Metal-Oxide-Semiconductor Devices
Observation of Deep-Level Centers in 4H-Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors by Spin Dependent Recombination
Forming Gas Annealing of the Carbon PbC Center in Oxidized Porous 3C- and 4H-SiC: An EPR Study
Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution?
Scanning Tunnenling Spectroscopy of Oxidized 6H-SiC Surfaces
Ellipsometric and XPS Studies of 4H-SiC/SiO2 Interfaces, and Sacrificial Oxide Stripped 4H-SiC Surfaces
Real Time Observation of SiC Oxidation Using an In Situ Ellipsometer
Fast Non-Contact Dielectric Characterization for SiC MOS Processing
High Temperature Reliability of SiC n-MOS Devices up to 630 °C
High Inversion Channel Mobility of 4H-SiC MOSFETs Fabricated on C(000-1) Epitaxial Substrate with Vicinal (Below 1º) Off-Angle
PECVD Deposited TEOS for Field-Effect Mobility Improvement in 4H-SiC MOSFETs on the (0001) and (11-20) Faces
Process Optimisation for 4H-SiC MOSFET Applications
Determination of the Temperature and Field Dependence of the Interface Conductivity Mobility in 4H-SiC/SiO2
Modelling of the Anomalous Field-Effect Mobility Peak of O-Ta2Si/4H-SiC High-k MOSFETs Measured in Strong Inversion
Gamma Irradiation Effects on 4H-SiC MOS Capacitors and MOSFETs
High Temperature Annealing Study of Al2O3 Deposited by ALCVD on n-Type 4H-SiC
Experimental and First-Principles Studies of the Band Alignment at the HfO2/4H-SiC (0001) Interface
Structural and Morphological Properties of Ultrathin HfO2 Dielectrics on 4H-SiC (0001)
Low Temperature Deposition of HfO2 Gate Insulator on SiC by Metalorganic Chemical Vapor Deposition
Electrical Properties of the La2O3/4H-SiC Interface Prepared by Atomic Layer Deposition Using La(iPrCp)3 and H2O
Theoretical Study of an Effective Field Plate Termination for SiC Devices Based on High-k Dielectrics
5.4 Chemical-Mechanical Polishing of SiC
Preparation and Evaluation of Damage Free Surfaces on Silicon Carbide
Selectivity and Residual Damage of Colloidal Silica Chemi-Mechanical Polishing of Silicon Carbide
Augmented CMP Techniques for Silicon Carbide
5.5 Micromachining and MEMS
Characterization of Low Stress, Undoped LPCVD Polycrystalline SiC Films for MEMS Applications
Mechanical Testing of Flexible Silicon Carbide Interconnect Ribbons
Micromachining of Novel SiC on Si Structures for Device and Sensor Applications
Deep Reactive Ion Etching (DRIE) of High Aspect Ratio SiC Microstructures Using a Time-Multiplexed Etch-Passivate Process
Via Hole Formation in Silicon Carbide by Laser Micromachining
Development of a Microstrip SiC MMIC Process
Energy Efficiency: The Commercial Pull for SiC Devices
SiC Device Applications: Identifying and Developing Commercial Applications
Developments in Hybrid Si – SiC Power Modules
Almost Ideal Thermionic-Emission Properties of Ti-Based 4H-SiC Schottky Barrier Diodes
Electrothermal Issues in 4H-SiC 600 V Schottky Diodes in Forward Mode: Experimental Characterization, Numerical Simulations and Analytical Modelling
A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC Applications
Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules
Correlation between Leakage Current and Ion-Irradiation Induced Defects in 4H-SiC Schottky Diodes
Design and Analysis of a Dual-Step Field-Plate Terminated 4H-SiC Schottky Diode Using SiO2/High-K Dielectric Stack
Fabrication of 4H-SiC Floating Junction Schottky Barrier Diodes (Super-SBDs) and their Electrical Properties
Optimization of a SiC Super-SBD Based on Scaling Properties of Power Devices
Fast Switching (41 MHz), 2.5 mΩ•cm2, High Current 4H-SiC VJFETs for High Power and High Temperature Applications
10 kV, 87 mΩcm2 Normally-Off 4H-SiC Vertical Junction Field-Effect Transistors
Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs
Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET
Design Considerations of a New 4H-SiC Enhancement-Mode Lateral Channel Vertical JFET for Low-Loss Switching Operation
Low On-Resistance in 4H-SiC RESURF JFETs Fabricated with Dry Process for Implantation Metal Mask
SiC Smart Power JFET Technology for High-Temperature Applications
Inherently Safe Resonant Reset Forward Converter Using a Bias-Enhanced SiC JFET
Current Sensing for SiC Power Devices
Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ•cm2
RF and DC Characterization of Self-Aligned L-Band 4H-SiC Static Induction Transistors
SiC MESFET with a Double Gate Recess
High Power High Efficiency Lateral Epitaxy MESFETs in Silicon Carbide
RF Characteristics of a Fully Ion-Implanted MESFET on a Bulk Semi-Insulating 4H-SiC Substrate
High-Frequency SiC MESFETs with Silicon Dioxide/Silicon Nitride Passivation
Double Gate 180V-128mA/mm SiC-MESFET for Power Switch Applications
The Role of Residual Source/Drain Implant Damage Traps on SiC MESFET Drain I-V Characteristics
Time Domain and Frequency Analysis of Random Telegraph Signal and the Contributions of G-R Centres to I-V Instabilities in 4H-SiC MESFETs
SiC Power MOSFETs – Status, Trends and Challenges
Development of 8 mΩ-cm2, 1.8 kV 4H-SiC DMOSFETs
4H-SiC DMOSFETs Processed Using Graphite Capped Implant Activation Anneal
Optimum Design of Short-Channel 4H-SiC Power DMOSFETs
Realization of Large Area Vertical 3C-SiC MOSFET Devices
High Power-Density 4H-SiC RF MOSFETs
4.3 mΩcm2, 1100 V 4H-SiC Implantation and Epitaxial MOSFET
Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
Switching Characteristics of SiC-MOSFET and SBD Power Modules
Characterization of 4H-SiC MOSFETs Formed on the Different Trench Sidewalls
The Characteristics of MOSFETs Fabricated on the Trench Sidewalls of Various Faces Using 4H-SiC (11-20) Substrates
Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility
Reduction of On-Resistance in 4H-SiC Multi-RESURF MOSFETs
Fabrication of 4H-SiC DIMOSFETs by High-Temperature (>1400°C) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace
A Study on the Reliability and Stability of High Voltage 4H-SiC MOSFET Devices
Bias Stress-Induced Threshold-Voltage Instability of SiC MOSFETs
Using a First Principles Coulomb Scattering Mobility Model for 4H-SiC MOSFET Device Simulation
Optimisation of 4H-SiC MOSFET Structures for Logic Applications
Evolution of Drift-Free, High Power 4H-SiC PiN Diodes
Measurements of Breakdown Field and Forward Current Stability in 3C-SiC pn Junction Diodes Grown on Step-Free 4H-SiC
High-Temperature (up to 800 K) Operation of 6-kV 4H-SiC Junction Diodes
About the Nature of Recombination Current in 4H-SiC pn Structures
Charge Induced in 6H-SiC PN Diodes by Irradiation of Oxygen Ion Microbeams
Demonstration of a 4H SiC Betavoltaic Cell
High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications
Dynamic Characteristics of 4H-SiC pin Diode on (000-1)C-Face with Small Forward Degradation
Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill
Characteristics and Ionization Coefficient Extraction of 1kV 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped Annealing
Demonstration of High-Voltage 4H-SiC Bipolar RF Power Limiter
Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range
CM-Wave Modulator with High-Voltage 4H SiC pin Diodes
Numerical Investigation of SiC Devices Performance Considering the Incomplete Dopant Ionization
High Power Photoconductive Switch of 4H-SiC with Damage-Free Electrodes by Using n+-GaN Subcontact Layer
6.3.2 Transistors and Thyristors
Advances in SiC GTO Development and Its Applications
A 1cm × 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules
Simulation of High-Voltage Injection-Enhanced 4H-SiC N-Channel IGBTs with Forward Drop Approaching that of a PiN Junction Rectifier
Simulations of 10 kV Trench Gate IGBTs on 4H-SiC
Influence of Basal Plane Dislocation Induced Stacking Faults on the Current Gain in SiC BJTs
First Demonstration of 2.1 kW Output Power at 425 MHz Using 4H-SiC RF Power BJTs
1836 V, 4.7 mΩ•cm2 High Power 4H-SiC Bipolar Junction Transistor
4H-SiC Bipolar Transistors with UHF and L-Band Operation
Current Gain Dependence on Emitter Width in 4H-SiC BJTs
Optimization of the Specific On-Resistance of 4H-SiC BJTs
Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors
High Temperature Characterization of 4H-SiC Bipolar Junction Transistors
Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs
400 Watt Boost Converter Utilizing Silicon Carbide Power Devices and Operating at 200°C Baseplate Temperature
Device Options and Design Considerations for High-Voltage (10-20 kV) SiC Power Switching Devices
Novel Power Si/4H-SiC Heterojunction Tunneling Transistor (HETT)
6.4 Sensors and Detectors
SiC-Based MOSFETs for Harsh Environment Emissions Sensors
Development of Ultra High Sensitivity UV Silicon Carbide Detectors
Silicon Carbide Power Diodes as Radiation Detectors
Minimum Ionizing Particle Detector Based on p+n Junction SiC Diode
Radiation Hard Devices Based on SiC
The Limit of SiC Detector Energy Resolution in Ion Spectometry
7.1 Growth of III-Nitrides
Reduction of Defects in GaN Epitaxial Films Grown Heteroepitaxially on SiC
Molecular Beam Epitaxy of Cubic Group III-Nitrides on Free-Standing 3C-SiC Substrates
Surface Morphology of GaN Films Grown by RF-Plasma MBE Using Lateral Overgrowth and Low-Temperature Ga-rich Condition
The Effect of Aluminum Nitride-Silicon Carbide Alloy Buffer Layers on the Sublimation Growth of Aluminum Nitride on SiC (0001) Substrates
Growth of AlN and AlN-SiC Solid Solution by Sublimation Method
7.2 Physical Properties and Characterization of III-Nitrides
Improved Structural Quality and Carrier Decay Times in GaN Epitaxy on SiN and TiN Porous Network Templates
Electron Microscopy Investigation of the Role of Surface Steps in the Generation of Dislocations during MOCVD Growth of GaN on 4H-SiC
Strain Relaxation in GaN/AlN Films Grown on Vicinal and On-Axis SiC Substrates
Anisotropic Properties of GaN Studied by Raman Scattering
Structural Characterization of Bulk AlN Single Crystals Grown from Self-Seeding and Seeding by SiC Substrates
7.3 III-Nitride Surfaces and Interfaces
Asymmetric Interface Densities on n and p Type GaN MOS Capacitors
Effects of Rapid Thermal Annealing Treatment on the Surface Band Bending of n-type GaN Studied by Surface Potential Electric Force Microscopy
Quantitative Mobility Spectrum Analysis of AlGaN/GaN Heterostructures Using Variable-Field Hall Measurements
Growth and Investigation of n-AlGaN/p-6H-SiC/n-6H-SiC Heterostructures
Structural Properties and Electrical Characteristics of Homoepitaxial GaN PiN Diodes
Electron Injection from GaN to SiC and Fabrication of GaN/SiC Heterojunction Bipolar Transistors
Direct Electrical Characteristics of GaN Nanowire Field Effect Transistor (FET) without Assistance of E-Beam Lithography (EBL)
GaN Resistive Gas Sensors for Hydrogen Detection
Chapter 8. Related Materials
Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC
Effect of the Crystallization Conditions on the Epitaxial Relationship of Si Deposited on 3C-SiC(100)
Optical Characterization of ZnO Materials Grown by Modified Melt Growth Technique
The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices
Role of Oxygen in Growth of Carbon Nanotubes on SiC
Structural and Electrical Characteristics of Carbon Nanotubes Formed on Silicon Carbide Substrates by Surface Decomposition
First Principles Modelling of Scroll-to-Nanotube Defect: Screw-Type Dislocation
SNOM Investigation of Surface Morphology Changes during Cr/Au Contact Fabrication on Single-Crystal CVD Diamond
Silicon Carbide and Related Materials 2005
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
