Description

The spectral responses in quantum efficiency provide essential information about current generation, recombination, and diffusion mechanisms in a photodetector, photodiode, and photovoltaic devices as the quantum efficiency is a function of the voltage and light biases and the spectral content of the bias light and/or location of the devices. Recently, P-type Kesterite thin-film solar cells are emerging as they have a high absorption coefficient (>104 cm−1) and ideal direct bandgap (1.4–1.5 eV), which make them a perfect candidate for photovoltaic application. However, a champion device from Zincblende (CdTe) or Chalcopyrite (CIGS) solar cells shows ~21% efficiency (<21.5%, First Solar and <21.7%, ZSW, respectively) while Kesterite devices suffer from severe losses with <12.6% efficiency. Furthermore, the maximum theoretical efficiency based on Shockley-Queisser limit is about 32.2%, which indicates there is much room for the improvement. Consequently, the implication from the current situation highlights the need for a systematic analysis of the loss mechanism in Kesterite devices. In this work, we carried out a systematic study of the efficiency limiting factors based on quantum efficiency to model the quantum efficiency response of current CZTSSe thin-film solar cells. This will provide the guidance for proper interpretation of device behaviors when it is measured by quantum efficiency.

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