Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy
( Modern Technologies for Creating the Thin-film Systems and Coatings )
Publication series ： Modern Technologies for Creating the Thin-film Systems and Coatings
Author： Chen-Chi Yang Ikai Lo Cheng-Hung Shih Chia-Hsuan Hu5
Publisher： IntechOpen
Publication year： 2017
E-ISBN: INT6332665812
P-ISBN(Paperback): 9789535130031
P-ISBN(Hardback): 9789535130048
Subject： Q Biological Sciences
Keyword： 生物科学
Language： ENG
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Growth and Characteristics of High-quality InN by Plasma- Assisted Molecular Beam Epitaxy
Description
The high-quality InN epifilms and InN microdisks have been grown with InGaN buffer layers at low temperatures by plasma-assisted molecular beam epitaxy. The samples were analyzed using X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, and photoluminescence. The characteristics of the InN epifilms and InN microdisks were studied, and the role of InGaN buffer was evaluated.
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