Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures
( Crystalline and Non-crystalline Solids )
Publication series ： Crystalline and Non-crystalline Solids
Author： Mario Moreno Roberto Ambrosio ArturoTorres Alfonso Torres5
Publisher： IntechOpen
Publication year： 2016
E-ISBN: INT6150163522
P-ISBN(Paperback): 9789535124450
P-ISBN(Hardback): 9789535124467
Subject： TB General Industrial Technology
Keyword： 一般工业技术
Language： ENG
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Amorphous, Polymorphous, and Microcrystalline Silicon Thin Films Deposited by Plasma at Low Temperatures
Description
The present chapter is devoted to the study of amorphous (a-Si:H), polymorphous (pm-Si:H), and microcrystalline (μc-Si:H) silicon, deposited by the plasma-enhanced chemical vapor deposition (PECVD) technique at low temperatures. We have studied the main deposition parameters that have strong influence on the optical, electrical, and structural properties of the polymorphous and microcrystalline materials. Our results reveal the key deposition conditions for obtained films with optical and electrical characteristics, which are suitable for applications on thin-film solar cells and semiconductor devices.
Chapter