Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property
( Nanoelectronics and Materials Development )
Publication series ： Nanoelectronics and Materials Development
Author： Fan Wu and Nan Yao
Publisher： IntechOpen
Publication year： 2016
E-ISBN: INT6156064060
P-ISBN(Paperback): 9789535125259
P-ISBN(Hardback): 9789535125266
Subject： TB General Industrial Technology
Keyword： 一般工业技术
Language： ENG
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Epitaxial Cu3Ge Thin Film: Fabrication, Structure, and Property
Description
In this paper, the fabrication and electrical property characterization of epitaxial Cu3Ge thin film are performed. By adjusting deposition parameters, the crystallinity of the as‐grown Cu3Ge thin films is improved, with the formation of twins within it. The average work function of epitaxial Cu3Ge thin film is measured to be ∼4.47 + 0.02 eV, rendering it a desirable mid‐gap gate metal for applications in complementary metal‐oxide semiconductor (CMOS) devices. The present study therefore shows an epitaxial Cu3Ge thin film that is promising for applications.
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