GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application ( Solar Cells - Research and Application Perspectives )

Publication series ： Solar Cells - Research and Application Perspectives

Author： Kazuma Ikeda Han Xiuxun Bouzazi Boussairi and Yoshio Ohshita  

Publisher： IntechOpen‎

Publication year： 2013

E-ISBN: INT0341851885

P-ISBN(Paperback): 9789535110033

P-ISBN(Hardback):  9789535110033

Subject： TK Energy and Power Engineering

Keyword： 能源与动力工程

Language： ENG

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GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application

Chapter

Chapter 10 GaAsN Grown by Chemical Beam Epitaxy for Solar Cell Application

1. Introduction

2. Chemical beam epitaxy

2.1. Growth procedure of chemical beam epitaxy

2.2. Growth of GaAsN thin films

2.3. Crystal quality of GaAsN grown by CBE

3. Hole mobilities

3.1. Hall hole mobility

3.2. Improvement of mobility by controlling the growth rate

4. Mobility contributed from N-related scattering center

4.1. Minority-carrier lifetime

4.1.1. Improvement of minority carrier lifetime by controlling growth rate

4.2. Improvement of minority carrier lifetime by controlling substrate orientation

5. Lattice defects in GaAsN grown by CBE

5.1. N-related non radiative recombination center

5.2. N-related acceptor like state in GaAsN

6. Conclusion

Author details

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