Influence of Quantum Interference on the Tunnel Magnetoresistance in a Molecular Junction in the Presence of In-Plane Electric Field

Author： Ahmadi Fouladi A.   Ketabi S.  

Publisher： Springer Publishing Company

ISSN： 1557-1939

Source： Journal of Superconductivity and Novel Magnetism, Vol.27, Iss.4, 2014-04, pp. : 1105-1110

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Plasma oxidation and magnetoresistance in tunnel junction device

By Jeon D.M.   Park J.W.   Kim Y.S.   Yoon D.H.   Suh S.J.  

Thin Solid Films, Vol. 435, Iss. 1, 2003-07 ,pp. : 135-138

Elsevier

Access to resources Recommend Favorite

Comparative analysis of electric field influence on the quantum wells with different boundary conditions

By  

ANNALEN DER PHYSIK, Vol. 527, Iss. 3-4, 2015-04 ,pp. : 296-310

John Wiley & Sons Inc

Access to resources Recommend Favorite

Comparative analysis of electric field influence on the quantum wells with different boundary conditions.

By  

ANNALEN DER PHYSIK, Vol. 527, Iss. 3-4, 2015-04 ,pp. : 278-295

John Wiley & Sons Inc

Access to resources Recommend Favorite

Tunnel Magnetoresistance of the Heterocyclic Molecular Junctions: A Green's Function Approach

By Ahmadi Fouladi A.  

Journal of Superconductivity and Novel Magnetism, Vol. 25, Iss. 6, 2012-08 ,pp. : 1965-1970

Springer Publishing Company

Access to resources Recommend Favorite

In-Plane and Out-of-Plane Magnetoresistance in Bi2Sr2CaCu2O8+x with Various Carrier Densities

By Heine G.   Lang W.   Wang X.L.   Dou S.X.  

Journal of Low Temperature Physics, Vol. 117, Iss. 5-6, 1999-12 ,pp. : 1253-1257

Springer Publishing Company

Access to resources Recommend Favorite