Related content

First diode-pumped Yb-doped solid-state laser continuously tunable between 1000 and 1010 nm

By Jacquemet M.   Balembois F.   Chénais S.   Druon F.   Georges P.   Gaumé R.   Ferrand B.  

Applied Physics B, Vol. 78, Iss. 1, 2004-01 ,pp. : 13-18

Springer Publishing Company

Access to resources Recommend Favorite

Single-frequency cw vertical external cavity surface emitting semiconductor laser at 1003 nm and 501 nm by intracavity frequency doubling

By Jacquemet M.   Domenech M.   Lucas-Leclin G.   Georges P.   Dion J.   Strassner M.   Sagnes I.   Garnache A.  

Applied Physics B, Vol. 86, Iss. 3, 2007-02 ,pp. : 503-510

Springer Publishing Company

Access to resources Recommend Favorite

Diode-pumped passively Q-switched Nd : YAG laser at 1123 nm

By Chen Y.F.   Lan Y.P.  

Applied Physics B, Vol. 79, Iss. 1, 2004-07 ,pp. : 29-31

Springer Publishing Company

Access to resources Recommend Favorite

Continuous-wave intracavity Raman laser at 1179.5 nm with SrWO 4 Raman crystal in diode-end-pumped Nd:YVO 4 laser

By Fan L.  

Applied Physics B, Vol. 94, Iss. 4, 2009-03 ,pp. : 553-557

Springer Publishing Company

Access to resources Recommend Favorite

Diode-pumped Q-switched laser with intracavity sum frequency mixing in periodically poled KTP

By Chen Y.F.   Chen Y.S.   Tsai S.W.  

Applied Physics B, Vol. 79, Iss. 2, 2004-07 ,pp. : 207-210

Springer Publishing Company

Access to resources Recommend Favorite