Thermal evaporation and solution strategies to novel nanoarchitectures of silicon carbide

Author： Wu R.B.   Yang G.Y.   Pan Y.   Wu L.L.   Chen J.J.   Gao M.X.   Zhai R.   Lin J.  

Publisher： Springer Publishing Company

ISSN： 0947-8396

Source： Applied Physics A, Vol.88, Iss.4, 2007-09, pp. : 679-685

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Tribochemical polishing of silicon carbide in oxidant solution

By Zhu Z.   Muratov V.   Fischer T.E.  

Wear, Vol. 225, Iss. 2, 1999-04 ,pp. : 848-856

Elsevier

Access to resources Recommend Favorite

Growth orientation of one-dimensional silicon nanowires prepared by thermal evaporation

By Ma X. L.   Zhu Y. L.   Zhang Z.  

Philosophical Magazine Letters, Vol. 82, Iss. 8, 2002-08 ,pp. : 461-468

Taylor & Francis Ltd

Access to resources Recommend Favorite

Recrystallization of hexagonal silicon carbide after gold ion irradiation and thermal annealing

By  

Philosophical Magazine, Vol. 94, Iss. 34, 2014-12 ,pp. : 3898-3913

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of thermal oxidation on indentation and scratching of single-crystal silicon carbide on microscale

By Pohlmann K.   Bhushan B.   Zum Gahr K.-H.  

Wear, Vol. 237, Iss. 1, 2000-01 ,pp. : 116-128

Elsevier

Access to resources Recommend Favorite

Recrystallization of amorphous ion-implanted silicon carbide after thermal annealing

By Miro S.  

Philosophical Magazine Letters, Vol. 92, Iss. 11, 2012-11 ,pp. : 633-639

Taylor & Francis Ltd

Access to resources Recommend Favorite