Empirical Data of the Metal-Ferroelectric-Semiconductor Field Effect Transistor Polarization and Channel Resistance for Timing and Retention Analysis

Author: Hunt Mitchell R.   McCartney Crystal L.   Mitchell Cody   Evans Joseph   Ho Fat D.  

Publisher: Taylor & Francis Ltd

ISSN: 1058-4587

Source: Integrated Ferroelectrics, Vol.157, Iss.1, 2014-10, pp. : 12-22

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content