On the elastic field and image force of dislocations in anisotropic solids and its application to GaN nanostructures

Author： Ye Wei Ougazzaden Abdallah Cherkaoui Mohammed

ISSN： 1478-6443

Source： Philosophical Magazine, Vol.94, Iss.11, 2014-04, pp. : 1235-1248

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Partial dislocations in wurtzite GaN

PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol. 202, Iss. 15, 2005-12 ,pp. : 2888-2899

John Wiley & Sons Inc

Access to resources Recommend Favorite

EBIC investigations of dislocations in ELOG GaN

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 8, 2015-08 ,pp. : 1132-1135

John Wiley & Sons Inc

Access to resources Recommend Favorite

Electronic structure of threading dislocations in wurtzite GaN

PHYSICA STATUS SOLIDI (C) - CURRENT TOPICS IN SOLID STATE PHYSICS, Vol. 12, Iss. 8, 2015-08 ,pp. : 1123-1128

John Wiley & Sons Inc

Access to resources Recommend Favorite

Electron microscopy of dislocations introduced into GaN by plastic deformation

By Suzuki K. Takeuchi S.

Philosophical Magazine Letters, Vol. 79, Iss. 7, 1999-07 ,pp. : 423-428

Taylor & Francis Ltd

Access to resources Recommend Favorite

Photo-stimulated current spectroscopy and its application in detecting aluminum implantation-induced deep traps in GaN

By Xu X. He H. Liu H. Shi C. Ge W. Luo E.Z. Sundaravel B. Wilson I.H.

Thin Solid Films, Vol. 416, Iss. 1, 2002-09 ,pp. : 294-301

Elsevier

Access to resources Recommend Favorite