Semiconductor Materials for Optoelectronics and LTMBE Materials
：Proceedings: Symposium A: Semiconductor Materials for Optoelectronic Devices/OEICs/Photonics and Symposium B: Low Temperature Molecular Beam Epitaxial III–V Materials: Physics/Applications of 1993 E-MRS Spring Conference Strasbourg, France, May 4–7, 1993
( Volume 40 )
Publication subTitle ：Proceedings: Symposium A: Semiconductor Materials for Optoelectronic Devices/OEICs/Photonics and Symposium B: Low Temperature Molecular Beam Epitaxial III–V Materials: Physics/Applications of 1993 E-MRS Spring Conference Strasbourg, France, May 4–7, 1993
Publication series ：Volume 40
Author： Hirtz J. P.;Whitehouse C.;Meier H. P.
Publisher： Elsevier Science
Publication year： 2016
E-ISBN: 9781483290423
P-ISBN(Paperback): 9780444817693
Subject： O413 quantum theory;TN4 microelectronics, integrated circuit (IC)
Keyword： 机械、仪表工业
Language： ENG
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Description
These three day symposia were designed to provide a link between specialists from university or industry who work in different fields of semiconductor optoelectronics. Symposium A dealt with topics including: epitaxial growth of III-V, II-VI, IV-VI, Si-based structures; selective-area, localized and non-planar epitaxy, shadow-mask epitaxy; bulk and new optoelectronic materials; polymers for optoelectronics.
Symposium B dealt with III-V epitaxial layers grown by low temperature molecular beam epitaxy, a subject which has undergone rapid development in the last three years.