Broadband terahertz radiation from a biased two-dimensional electron gas in an AlGaN/GaN heterostructure

By Zhongxin Zheng   Jiandong Sun   Yu Zhou   Zhipeng Zhang   Hua Qin  

Journal of Semiconductors, Vol. 36, Iss. 10, 2015-10 ,pp. : 104002-104006

IOP Publishing

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Characterization of Non-Alloyed Ohmic Contacts to Si-Implanted AlGaN/GaN Heterostructures for High-Electron Mobility Transistors

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Springer Publishing Company

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Nonpolar AlGaN/GaN HFETs with a normally off operation

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Electroreflectance characterization of AlInGaN/GaN high-electron mobility heterostructures

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Transport coefficients of AlGaN/GaN heterostructures

By Ahoujja M.   Mitchel W.   Elhamri S.   Newrock R.   Mast D.   Redwing J.   Tischler M.   Flynn J.  

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