Formation of GaAs and Ga1−xAlxAs (0 ≤ x ≤ 0.3) layers on GaAs (111)A substrate by organometallic vapor phase epitaxy

Author： LarkinS   AvksentyevA   VakivM   KrukovskyR   KostY   MykhashchukY   KrukovskyS   SaldanI  

Publisher： IOP Publishing

E-ISSN： 1402-4896|90|9|94001-94005

ISSN： 1402-4896

Source： Physica Scripta, Vol.90, Iss.9, 2015-09, pp. : 94001-94005

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Vibrational spectroscopy of the Ga1−x AlxP epitaxial layers grown on GaP(111) substrate by the liquid-phase epitaxial technique

By Vodop’yanov L.   Kozyrev S.   Mel’nik N.  

Physics of the Solid State, Vol. 42, Iss. 4, 2000-04 ,pp. : 633-637

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

ATOMIC STRUCTURE OF INTERFACES IN GaAs/Ga1-xAlxAs SUPERLATTICES

By  

Le Journal de Physique Colloques, Vol. 48, Iss. C5, 1987-11 ,pp. : C5-97-C5-100

Edp Sciences

Access to resources Recommend Favorite

ORGANOMETALLIC EPITAXIAL GROWTH OF GaAs1-xPx

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-323-C5-338

Edp Sciences

Access to resources Recommend Favorite

PROBLEM RELATED TO THE MBE GROWTH AT HIGH SUBSTRATE TEM0PERATURE FORGaAs-Ga1-xAlxAs DOUBLE HETEROSTRUCTURE LASERS

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-483-C5-489

Edp Sciences

Access to resources Recommend Favorite

Liquid phase epitaxy of (GaAs)1−x (ZnSe)x solid solution layers from a lead-based solution melt

By Saidov A.   Razzakov A.   Gaimnazarov K.  

Technical Physics Letters, Vol. 27, Iss. 11, 2001-11 ,pp. : 973-974

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite