Analytical electron microscopy study on gallium nitride systems doped with manganese and iron

By  

Semiconductor Science and Technology, Vol. 30, Iss. 3, 2015-03 ,pp. : 35002-35010

IOP Publishing

Access to resources Recommend Favorite

Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique

By Rodak L.  

Journal of Electronic Materials, Vol. 40, Iss. 4, 2011-04 ,pp. : 388-393

Springer Publishing Company

Access to resources Recommend Favorite

Comparison of composition and atomic structure of amorphous indium gallium zinc oxide thin film transistor before and after positive bias temperature stress by transmission electron microscopy

By Prakash Gokul   Gray Jennifer L   Kanicki J   Prakash Gokul  

Semiconductor Science and Technology, Vol. 30, Iss. 5, 2015-05 ,pp. : 55008-55015

IOP Publishing

Access to resources Recommend Favorite

Control of the structure and surface morphology of gallium nitride and aluminum nitride thin films by nitrogen background pressure in pulsed laser deposition

By Sudhir G.   Fujii H.   Wong W.   Kisielowski C.   Newman N.   Dieker C.   Liliental-Weber Z.   Rubin M.   Weber E.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 215-221

Springer Publishing Company

Access to resources Recommend Favorite

Molecular view of diamond CVD growth

By Battaile C.   Srolovitz D.   Butler J.  

Journal of Electronic Materials, Vol. 26, Iss. 9, 1997-09 ,pp. : 960-965

Springer Publishing Company

Access to resources Recommend Favorite