Investigation of V-Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN heterostructures with a thin GaN cap layer

By Sang Min Jung   Chang Taek Lee   Moo Whan Shin  

Semiconductor Science and Technology, Vol. 30, Iss. 7, 2015-07 ,pp. : 75012-75017

IOP Publishing

Access to resources Recommend Favorite

Role of Barrier and Buffer Layer Defect States in AlGaN/GaN HEMT Structures

By Bradley S.T.   Young A.P.   Brillson L.J.   Murphy M.J.   Schaff W.J.  

Journal of Electronic Materials, Vol. 30, Iss. 3, 2001-03 ,pp. : 123-128

Springer Publishing Company

Access to resources Recommend Favorite

Au-free AlGaN/GaN heterostructure field-effect transistor with recessed overhang ohmic contacts using a Ti/Al bilayer

By LeeJae-Gil   KimHyun-Seop   KimDong-Hwan   HanSang-Woo   SeoKwang-Seok   ChaHo-Young  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85005-85011

IOP Publishing

Access to resources Recommend Favorite

Transport coefficients of AlGaN/GaN heterostructures

By Ahoujja M.   Mitchel W.   Elhamri S.   Newrock R.   Mast D.   Redwing J.   Tischler M.   Flynn J.  

Journal of Electronic Materials, Vol. 27, Iss. 4, 1998-04 ,pp. : 210-214

Springer Publishing Company

Access to resources Recommend Favorite

Moving photoluminescence band in AlGaN/GaN heterostructures

By OsinnykhI V   MalinT V   ZhuravlevK S  

Semiconductor Science and Technology, Vol. 30, Iss. 8, 2015-08 ,pp. : 85010-85015

IOP Publishing

Access to resources Recommend Favorite