Electronic properties of GaSe, InSe, GaS and GaTe layered semiconductors: charge neutrality level and interface barrier heights

Author: Brudnyi V N   Sarkisov S Yu   Kosobutsky A V  

Publisher: IOP Publishing

E-ISSN: 1361-6641|30|11|115019-115027

ISSN: 0268-1242

Source: Semiconductor Science and Technology, Vol.30, Iss.11, 2015-11, pp. : 115019-115027

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