Influence of dry-etching damage on the electrical properties of an AlGaN/GaN Schottky barrier diode with recessed anode

Author： Jian Zhong Yao Yao Yue Zheng Fan Yang Yi-Qiang Ni Zhi-Yuan He Zhen Shen Gui-Lin Zhou De-Qiu Zhou Zhi-Sheng Wu Bai-Jun Zhang Yang Liu

Publisher： IOP Publishing

E-ISSN： 1741-4199|24|9|97303-97307

ISSN： 1674-1056

Source： Chinese Physics B, Vol.24, Iss.9, 2015-09, pp. : 97303-97307

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