Publisher： Trans Tech Publications
E-ISSN： 1662-8985|2015|1096|503-508
ISSN： 1022-6680
Source： Advanced Materials Research, Vol.2015, Iss.1096, 2015-05, pp. : 503-508
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
In the analysis of semiconductor position sensitive detector (PSD) based on the traditional structure, using dual ion implantation method to studying the new type of PSD structure. The new structure of the n-type silicon substrate by implanting a high dose, low energy boron ions and another high energy boron ion, Which subsequent annealing of 2h at 1050 °C in an ambient of dry O2 to form a shallow and a low doped p-n junction. Experimental results show that the new structure of PSD can obtained high position resolution, smaller errors and nonlinear response time.
Related content
Access to resources
Recommend
By Murphy M. E. Insley G. M. Laugier M. T. Sutton D. Newcomb S. B.
Journal of Materials Science, Vol. 39, Iss. 2, 2004-01 ,pp. :
Study on the Performances Properties of Medical Pure Magnesium by Ion Implantation of Nitrogen
Advanced Materials Research, Vol. 2017, Iss. 1142, 2017-02 ,pp. :
Study on Seismic Response of the Structure Based on New-Style Isolation Bearings
Advanced Materials Research, Vol. 2014, Iss. 1065, 2015-01 ,pp. :