Modeling of Sheet Carrier Density, DC and Transconductance of Novel InxAl1-XN/GaN-Based HEMT Structures
Publisher: Trans Tech Publications
E-ISSN: 1662-8985|2015|1105|99-104
ISSN: 1022-6680
Source: Advanced Materials Research, Vol.2015, Iss.1105, 2015-06, pp. : 99-104
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Abstract