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Si Surface Preparation for Heteroepitaxial Growth of SiC Using In Situ Oxidation

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Surface Orientation Dependence of SiC Oxidation Process Studied by In Situ Spectroscopic Ellipsometry

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Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen-Doped 4H-SiC Substrate

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