Influence of Phosphorus Implantation on Electrical Properties of Al/SiO₂/4H-SiC MOS Structure

E-ISSN： 1662-9752|2015|821|496-499

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 496-499

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Phosphorus Implantation Prior to Oxidation on Electrical Properties of Thermally Grown SiO

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 133-138

Trans Tech Publications

Access to resources Recommend Favorite

Impact of Phosphorus Implantation on the Electrical Properties of SiO₂/4H-SiC Interfaces Annealed in N₂O

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 701-704

Trans Tech Publications

Access to resources Recommend Favorite

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 681-684

Trans Tech Publications

Access to resources Recommend Favorite

4H-SiC Trench Structure Fabrication with Al₂O₃ Etching Mask

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 371-374

Trans Tech Publications

Access to resources Recommend Favorite

Stable Phosphorus Passivated SiO

Materials Science Forum, Vol. 2014, Iss. 806, 2015-01 ,pp. : 139-142

Trans Tech Publications

Access to resources Recommend Favorite