Channel Mobility Improvement in 4H-SiC MOSFETs Using a Combination of Surface Counter-Doping and NO Annealing

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 693-696

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4H-SiC Surface Structures and Oxidation Mechanism Revealed by Using First-Principles and Classical Molecular Dynamics Simulations

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Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 429-432

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On the Formation of Graphene by Ge Intercalation of a 4H-SiC Surface

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Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 961-964

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Improving Mechanical Strength and Surface Uniformity to Prepare High Quality Thinned 4H-SiC Epitaxial Wafer Using Si-Vapor Etching Technology

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 375-378

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Structure and Surface Morphology of Thermal SiO₂ Grown on 4H-SiC by Metal-Enhanced Oxidation Using Barium

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Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 340-343

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