Potentialities of AlGaN/GaN Heterostructures Grown on 2°-Off 4H-SiC Substrates

E-ISSN： 1662-9752|2014|806|73-80

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2014, Iss.806, 2015-01, pp. : 73-80

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