High Quality 3C-SiC (111) Epitaxial Layer on Si (110) Substrate by Using Si₂Cl₆+C₃H₈

E-ISSN： 1662-9752|2015|821|197-200

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 197-200

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of Molten NaCl on the Synthesis of Ti₃SiC₂ Powders

Materials Science Forum, Vol. 2017, Iss. 898, 2017-07 ,pp. : 1611-1616

Trans Tech Publications

Access to resources Recommend Favorite

A Study on the Chemistry of Epitaxial Ti₃SiC₂ Formation on 4H-SiC Using Al-Ti Annealing

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 432-435

Trans Tech Publications

Access to resources Recommend Favorite

Physical Characterisation of 3C-SiC(001)/SiO₂ Interface Using XPS

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 151-154

Trans Tech Publications

Access to resources Recommend Favorite

Reliable 4H-SiC MOSFET with High Threshold Voltage by Al₂O₃-Inserted Gate Insulator

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 725-728

Trans Tech Publications

Access to resources Recommend Favorite

Interface Analysis of P-Type 4H-SiC/Al₂O₃ Using Synchrotron-Based XPS

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 693-696

Trans Tech Publications

Access to resources Recommend Favorite