Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2015|821|937-940

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 937-940

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