Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

Publisher: Trans Tech Publications

E-ISSN: 1662-9752|2015|821|851-854

ISSN: 0255-5476

Source: Materials Science Forum, Vol.2015, Iss.821, 2015-07, pp. : 851-854

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract