Nonvolatile Floating‐Gate Memories Based on Stacked Black Phosphorus–Boron Nitride–MoS2 Heterostructures

E-ISSN： 1616-3028|25|47|7360-7365

ISSN： 1616-301x

Source： ADVANCED FUNCTIONAL MATERIALS, Vol.25, Iss.47, 2015-12, pp. : 7360-7365

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