High current (1300 A) optical triggering of a 12 kV 4H-SiC thyristor

By Rumyantsev S.L.   Levinshtein M.E.   Shur M.S.   Cheng L.   Agarwal A.K.   Palmour J.W.  

Semiconductor Science and Technology, Vol. 28, Iss. 4, 2013-04 ,pp. : 45016-45018

IOP Publishing

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Holding current and switch-on mechanisms in 12 kV, 100 A 4H-SiC optically triggered thyristors

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Semiconductor Science and Technology, Vol. 28, Iss. 1, 2013-01 ,pp. : 15008-15012

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Optical triggering of 12 kV, 100 A 4H-SiC thyristors

By Rumyantsev S L   Levinshtein M E   Shur M S   Saxena T   Zhang Q J   Agarwal A K   Palmour J W  

Semiconductor Science and Technology, Vol. 27, Iss. 1, 2012-01 ,pp. : 15012-15015

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Development of 10 kV 4H-SiC JBS diode with FGR termination

By Runhua Huang   Yonghong Tao   Pengfei Cao   Ling Wang   Gang Chen   Song Bai   Rui Li   Yun Li   Zhifei Zhao  

Journal of Semiconductors, Vol. 35, Iss. 7, 2014-07 ,pp. : 74005-74008

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1.4 kV 4H-SiC PiN diode with a robust non-uniform floating guard ring termination

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Journal of Semiconductors, Vol. 35, Iss. 5, 2014-05 ,pp. : 54003-54006

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