Coexistence of diode-like volatile and multilevel nonvolatile resistive switching in a ZrO2/TiO2 stack structure

Author: Li Yingtao   Yuan Peng   Fu Liping   Li Rongrong   Gao Xiaoping   Tao Chunlan  

Publisher: IOP Publishing

E-ISSN: 1361-6528|26|39|391001-391005

ISSN: 0957-4484

Source: Nanotechnology, Vol.26, Iss.39, 2015-10, pp. : 391001-391005

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Abstract

Diode-like volatile resistive switching as well as nonvolatile resistive switching behaviors in a Cu/ZrO2/TiO2/Ti stack are investigated. Depending on the current compliance during the electroforming process, either volatile resistive switching or nonvolatile resistive switching is observed. With a lower current compliance (<10 μA), the Cu/ZrO2/TiO2/Ti device exhibits diode-like volatile resistive switching with a rectifying ratio over 106. The permanent transition from volatile to nonvolatile resistive switching can be obtained by applying a higher current compliance of 100 μA. Furthermore, by using different reset voltages, the Cu/ZrO2/TiO2/Ti device exhibits multilevel memory characteristics with high uniformity. The coexistence of nonvolatile multilevel memory and diode-like volatile resistive switching behaviors in the same Cu/ZrO2/TiO2/Ti device opens areas of applications in high-density storage, logic circuits, neural networks, and passive crossbar memory selectors.

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