Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs
Publisher: IOP Publishing
E-ISSN: 1742-6596|647|1|231-234
ISSN: 1742-6596
Source: Journal of Physics: Conference Series , Vol.647, Iss.1, 2015-10, pp. : 231-234
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Abstract