A Comparison of Temperature Dependence of I-V Characteristics in CNTFETs Models

Publisher： Bentham Science Publishers

E-ISSN： 2405-4623|1|1|61-68

ISSN： 2405-4615

Source： Current Nanomaterials, Vol.1, Iss.1, 2016-04, pp. : 61-68

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

This paper presents a comparison of temperature dependence of I-V characteristics in CarbonNanotube Field Effect Transistors (CNTFETs) models proposed in the literature in order to identifythe one more easily implementable in simulation software for electronic circuit design. At first weconsider a compact, semi-empirical model, already proposed by us, performing I-V characteristicsimulations at different temperatures. Our results are compared with those obtained with two othermodels: the numerical FETToy model and the Stanford-Source Virtual Carbon Nanotube Field-EffectTransistor model (VS-CNFET), obtaining I-V characteristics comparable with those of two examinedmodels, but with CPU calculation times much lower.

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