OPTICAL SPECTROSCOPY: TECHNOLOGY, PROPERTIES AND PERFORMANCE

OPTICAL SPECTROSCOPY: TECHNOLOGY, PROPERTIES AND PERFORMANCE

Library of Congress Cataloging-in-Publication Data

Contents

Preface

Chapter 1: Optical Emission Spectroscopy Used to Investigate Plasma Deposition of Thin Solid Films

Abstract

1. Introduction

2. Processes in Plasma

3. Spectroscopy with Plasma Light

4. Experimental Set-up

4.1. OES on Plasmas Used to Deposit SiOx Thin Films by rf Magnetron Reactive Sputtering

4.1.1. OES for Sputtered Silicon Atoms

4.1.2. The Provenience of the OES Oxygen Line

4.1.3. From OES Data to the Composition of the Deposited SiOx Layer

4.2. OES on Plasmas Used to Deposit a-C:H Thin Films by PECVD

4.2.1. Introductive Notions on the PECVD Deposition of a-C:H

4.2.2. OES Spectra of Various CH4 Plasmas: The Main Lines

4.2.3. Ideas for Process Characterization and Method Calibration

Conclusion

References

Chapter 2: Reflectance Spectroscopy

INQUIMAE/ Dpto. de Química Inorgánica, Analítica y Química

Física, Facultad de Ciencias Exactas y Naturales. Universidad

de Buenos Aires, Ciudad Universitaria,

Buenos Aires, Argentina

Abstract

1. Absorption, Transmission and Reflection of Light. Specular and Diffuse Reflection

2. Kubelka Munk Theory. The Remission Function

3. Pile of Plates Model

4. Reflectance and Particle Size

5. Measurement of Reflectance

5.1. UV-visible-NIR Reflection

5.2. IR Reflection Techniques

5.3. Time-resolved Reflectance

6. Applications of Reflectance Spectroscopy

6.1. Chromophore Concentrations from Reflected Light

6.2. Remote Sensing, Plant Physiology and Ecological Studies

6.3. Diseases Diagnosis

6.4. Cultural Heritage Objects

6.5. Other Applications

Conclusion

References

Links

Chapter 3: Photoreflectance Spectroscopy of Franz-Keldysh Oscillations from Semiconductor Heterostructures for Electronic and Optoelectronic Devices and Components

Abstract

I. Introduction

II. Experimental Setup for the Photoreflectance Measurements

III. Franz-Keldysh Oscillations Appearing in Bulk Single Crystals and Simple Epitaxial Structures: In the Absence of the Effects of the Interference Effects of the Probe Light Beam

VI. Franz-Keldysh Oscillations in the Epitaxial Structures: In the Presence of the Effects of the Interference of the Probe Light Beam

V. Franz-Keldysh Oscillations in the AlxGa1-xN/GaN Hetero structures: High Sensitivity to the Surface Morphology

VI. Estimation of the Built-in Electric Field Strength and Direction with Simultaneous Use of Photoreflectance Spectroscopy and Terahertz Spectroscopy

VII. Application of the Franz-Keldysh Oscillation to the Structure Desing of the Terahertz Wave Emitters

Conclusion

References

Chapter 4: IR Attenuated Total Reflection: A Tool to Investigate Liquid Penetration in Paper: Theoretical Considerations

Abstract

1. Introduction

2. On the Atr Method: Theoretical Considerations

3. Modeling the ATR Spectra

3.1. ATR Signals Assigned to Water and Paper

3.2. ATR Water Probing during Penetration into Paper

3.3. The Paper Revealed by the ATR Spectra

4. Liquid Penetration in Porous Paper

4.1. The Paper Structure: A Brief Introduction

4.2. On the Liquid Penetration in Porous Media

4.3. From the IR-ATR Signal to the Liquid Penetration Length

5. Validation of the Model with Experimental Data

Conclusion

References

Chapter 5: IR Attenuated Total Reflection: A Tool to Investigate Liquid Penetration in Paper: Experimental

Abstract

1. Introduction

2. Experimental Methods

3. A Comparison between the Two Methods

4. Using the ATR-IR Spectroscopy to Investigate the Liquid Penetration in Paper

4.1. The Influence of the Paper Relative Humidity on the Liquid Penetration Rate

4.2. Temperature Influence on the Liquid Penetration in Porous Paper

4.3. Water Penetration in Papers of Different Thickness

5. The Influence of the Liquid Nature: Glycerol versus Water

5.1. Pure Liquids: Glycerol versus Water

5.2. Mixture of Glycerol and Water

Conclusion

References

Chapter 6: Electronic Spectroscopy of Diffuse Reflection - A Promising Method for Quantifying the Coordination States of the Atoms in the Superficial Layer of Dispersed Materials

Abstract

Introduction

Theoretical Foundations of ESDR

Representation of the ESDR-Spectra

Methods of Separation the ESDR-Spectrum into Components

Role of Reference Sample

ESDR vs XRD

Conclusion

References

Chapter 7: Polariscopy: Its High Sensitivity to Internal/Residual Strains of Semiconductor Single Crystal Wafers

Abstract

I. Introduction

II. Principle of the Photelastic Effects and the Experiment Setups for the Polariscopic Measurement

III. Application of Polariscopic Measurement to a Semi-Insulating (0001)-Oriented 6H-SiC Wafer

IV. Application of Polariscopic Measurement to a (0001)-Oriented ZnO Wafer: Conventionality against the x-ray Topographic Measurement for the Semiconductors with High X-Ray Absorption Elements

V. Polariscopic Measurement of a (110)-Oriented ZnTe Single Crystal Chip: The Estimation of the Strain Sensitivity of the Polariscopic Analysis

Conclusion

References

Index