Chapter
3.3. BASIC THIN FILM CVD PROCESS PARAMETERS
3.4. BASIC THIN FILM CVD PROCESS METHODOLOGY
Chapter 4: PULSED CVD TOOLS AND PROCESS METHODOLOGY
4.1. INTRODUCTORY REMARKS
4.2. PULSED CVD TOOL DESING
4.3. PULSED CVD TOOL VACUUM SYSTEM CHARACTERISTICS
4.4. PULSED CVD TOOL GAS SYSTEM CHARACTERISTICS
4.5. ROLE OF MFC IN PULSED CVD PROCESSES
4.5. CONSECUTIVE PULSED CVD PROCESS METHODOLOGY
Chapter 5: BRIEF REVIEW ON CVD THIN FILM ANALYSIS TECHNIQUES
5.5. FILM ELECTRICAL PROPERTIES
Chapter 6: METHODOLOGY OF THIN FILM CVD KINETIC STUDIES
6.1. GENERAL CONSIDERATIONS
6.2. PRACTICAL IMPLEMENTATION OF THIN FILM CVD KINETIC METHODOLOGY FOR CVD PROCESSES ANALYSIS
6.3. RESEARCH METHODOLOGY FOR LPCVD PRODUCTUION PROCESSES
6.4. EXPERIMENTAL METHODOLOGY FOR SINGLE VAFER CHAMBER CVD PROCESSES
PART 2. EXAMPLES OF THIN FILM GROWTH KINETICS STUDIES
Chapter 7: SEMICONDUCTOR THIN FILM CVD: POLYSILICON
7.1. INTRODUCTORY REMARKS
7.2. BASIC DATA ON MONOSILANE PYROLISYS KINETICS
7.3. POLYSILICON GRAIN SIZE FEATURES
7.4. THIN POLYCRYSTALLINE FILMS GROWTH IN PRODUCTION BATCH LPCVD REACTORS
7.5. BRIEF VIEW ON THE POLYCRYSTALLINE FILMS GROWTH SCHEMES AND MECHANISMS
7.6. PLASMA-ENHANCED POLYSILICON DEPOSITION
Chapter 8: DIELECTRIC THIN FILM CVD: SILICON NITRIDE
8.1. INTRODUCTORY REMARKS
8.2. MONOSILANE-AMMONIA SYSTEM
8.3. SILICON TETRACHLORIDE-AMMONIA SYSTEM
8.4. DICHLOROSILANE-AMMONIA SYSTEM
8.5. BRIEF VIEW ON THE SILICON NITRIDE THIN FILM GROWTH SCHEMES AND MECHANISMS
8.6. PRODUCTION PROCESSES OF SILICON NITRIDE THIN FILM DEPOSITION
Chapter 9: DIELECTRIC THIN FILM CVD: SILICON DIOXIDE
9.1. INTRODUCTORY REMARKS
9.2. MONOSILANE - OXYGEN SYSTEM
9.3. MONOSILANE- NITROUS OXIDE SYSTEM
9.4. TEOS – PYROLISYS REACTION
9.6. OTHER SYSTEMS AND PLASMA ENHANCED CVD
Chapter 10: DIELECTRIC THIN FILM CVD: SILICATE GLASSES
10.1. INTRODUCTORY REMARKS
10.2. EXAMPLES OF GLASS FILM DEPOSITION KINETIC FEATURES
10.3. COMMONALITIES AND DIFFERENCIES OF GLASS FILM DEPOSITION KINETICS
10.4. GLASS FILM INDUSTRIAL CVD TECHNOLOGY
Chapter 11: CONDUCTIVE THIN FILM CVD: RUTHENIUM METAL
11.1. INTRODUCTORY REMARKS
11.2. INTRODUCTION TO THE PROBLEM
11.3. PULSED RU CVD PROCESS METHODOLOGY
11.4. RU FILM GROWTH KINETICS ON SILICON AND SIO2 SURFACES
11.5. SCHEMES OF RU FILM GROWTH
PART 3. THIN FILM CVD PROCESS FEATURES
Chapter 12: BASIC AEROSOL FORMATION EFFECTS AT CVD
12.1. INTRODUCTORY REMARKS
12.2. CVD KINETIC STUDIES OF THIN FILM/MICRO-PARTICLE FORMATION
12.3. IN-SITU STUDIES OF CVD GAS-PHASE MICRO-PARTICLE FORMATION
Chapter 13: THIN FILM PROCESS CLASSIFICATION AND SCHEMES
13.1. INTRODUCTORY REMARKS
13.2. SUMMARY OF STUDIED CVD REACTORS, CHEMICAL SYSTEMS AND THIN FILM GROWTH FEATURES
13.3. SUMMARY OF THIN FILM GROWTH FEATURES IN LPCVD REACTORS
13.4. GENERALIZED THIN FILM CVD PROCESS SCHEME
13.5. CVD THIN FILM DEPOSITION PROCESSES CLASSIFICATION
13.6. THIN FILM SIO2 AND SILICATE GLASS DEPOSITION PROCESSES SCHEMES
Chapter 14: THIN FILM STEP COVERAGE AND GAP-FILL
14.1. GENERAL DEFINITIONS
14.2. A METHODOLOGY FOR STEPPED IC DEVICE STRUCTURES CHARACTERIZATION
14.3. BASIC DEFINITIONS OF STEPPED IC DEVICE STRICTURES
14.4. BASIC DEFINITIONS FOR THIN FILM ON STEPPED IC DEVICE STRICTURES
14.5. CHARACTERIZATION OF THIN FILM CVD PROCESSES USED IN IC DEVICE TECHNOLOGY
14.6. WAYS TO IMPROVE AS-DEPOSITED THIN FILM CVD STEP COVERAGE AND GAP-FILL
14.7. SURFACE PROFILE AND GAP-FILL CAPABILITY IMPROVEMENT WITH FLOW-ABLE SILICATE GLASS FILMS
14.8. THE FILM GROWTH IN NARROW CONTACT HOLES
Chapter 15: BRIEF OVERVIEW ON INTERRELATION OF THIN FILM CVD, COMPOSITION, STRUCTURE AND PROPERTIES
15.1. INTRODUCTORY REMARKS
15.2. A BRIEF SUMMARY OF CONSOLIDATE MATERIAL
15.3. RELATIONSHIPS BETWEEN A GLASS STRUCTURE AND THE THIN GLASS FILM CVD FEATURES
15.4. CORRELATION OF STRUCTURE DISORDERING AND THE PHOSPHORUS- AND BORON SILICATE GLASS COMPOSITION
15.5. CORRELATION OF THE BPSG STRUCTURE DISORDERING AND MOISTURE ABSORPTION AND DEFECT FORMATION PROCESS
15.6. SPECIFIC ADDITIVE FEATURES IN BPSG FILM STRUCTURE
Chapter 16: SUMMARY AND FUTURE TRENDS
16.1. INTRODUCTORY REMARKS
16.2. SUMMARY OF THIN FILM CVD DEVELOPMENT TRENDS
16.3. DETAIL DESCRIPTION OF CVD MILESTONES
Thin Film Chemical Vapor Deposition in Electronics: Equipment, Methodology and Thin Film Growth Experience
( Materials Science and Technologies )
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