The effect of composite GaN/InGaN last barrier layer on electron leakage current and modal gain of InGaN‐based multiple quantum well laser diodes

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|212|12|2936-2943

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.212, Iss.12, 2015-12, pp. : 2936-2943

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