Nanostructural defects evidenced in failing silicon-based NMOS capacitors by advanced failure analysis techniques

Author: Faivre Emilie   Llido Roxane   Putero Magali   Fares Lahouari   Muller Christophe  

Publisher: Edp Sciences

E-ISSN: 1286-0050|66|1|10103-10103

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.66, Iss.1, 2014-04, pp. : 10103-10103

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Abstract