Temperature-dependent I-V characteristics in thermally annealed Co/p-InP contacts

Author： Ejderha K.   Yıldırım N.   Türüt A.   Abay B.  

Publisher： Edp Sciences

E-ISSN： 1286-0050|57|1|10102-10102

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.57, Iss.1, 2011-11, pp. : 10102-10102

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Temperature-dependent current-voltage characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts

By Ejderha Kadir   Yıldırm N.   Turut A.  

EPJ Applied Physics (The), Vol. 68, Iss. 2, 2014-10 ,pp. : 20101-20101

Edp Sciences

Access to resources Recommend Favorite

The effects of the temperature on I-V and C-V characteristics of Al/P2ClAn(C2H5COOH)/p-Si/Al structure

By Özdemir A. F.   Kotan Z.   Aldemir D. A.   Altındal S.  

EPJ Applied Physics (The), Vol. 46, Iss. 2, 2009-04 ,pp. : 20402-20402

Edp Sciences

Access to resources Recommend Favorite

Emphasis on trap activity in AlGaN/GaN HEMTs through temperature dependent pulsed I-V characteristics

By Agboton Alain   Defrance Nicolas   Altuntas Philippe   Lecourt François   Douvry Yannick   Hoel Virginie   Soltani Ali   De Jaeger Jean-Claude  

EPJ Applied Physics (The), Vol. 64, Iss. 2, 2013-11 ,pp. : 20101-20101

Edp Sciences

Access to resources Recommend Favorite

Effect of tunneling current on the reverse I-V characteristics of In, Al-pWSe2 Schottky diodes

By Bobby A.   Gupta P.S.   Antony B.K.  

EPJ Applied Physics (The), Vol. 60, Iss. 1, 2012-10 ,pp. : 10104-10104

Edp Sciences

Access to resources Recommend Favorite

I−V characteristics of co-planar metal-semiconductor-metal nanojunctions

By Rousset V.   Joachim C.   Ondarçuhu T.   Rousset B.  

EPJ Applied Physics (The), Vol. 3, Iss. 1, 2010-03 ,pp. : 21-28

Edp Sciences

Access to resources Recommend Favorite