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Current transport characteristics of pSe-nMoSe₂ heterojunction diode

Author： Sumesh C. K. Patel K. D. Pathak V. M. Srivastava R.

Publisher： Edp Sciences

E-ISSN： 1286-0050|52|3|30302-30302

ISSN： 1286-0042

Source： EPJ Applied Physics (The), Vol.52, Iss.3, 2010-11, pp. : 30302-30302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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Abstract

The characteristics of heterojunction diode pSe-nMoSe₂ fabricated from thermally evaporated p-Se films on n-type Molybdenum diselenide (MoSe₂) grown by direct vapour transport (DVT) technique have been examined by using current-voltage measurements. To investigate the dark current transport mechanism in pSe-nMoSe₂ heterojunctions the current-voltage characteristics were measured in the temperature range 100–300 K. The prepared diode shows a rectification ratio of the order of 10³ within the range –2 to 2 V. A multi-step tunnelling model was used to analyze the I-V-T characteristics of the prepared device. The activation energy determined from the saturation current was about 1.16 eV.

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