Growth and properties of Dy-doped GaN nanowires

Author: Cao Y. P.   Shi F.   Sun H. B.   Liu W. J.   Guo Y. F.   Xue C. S.  

Publisher: Edp Sciences

E-ISSN: 1286-0050|50|1|10602-10602

ISSN: 1286-0042

Source: EPJ Applied Physics (The), Vol.50, Iss.1, 2010-04, pp. : 10602-10602

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract