GaN heteroepitaxy by remote plasma MOCVD : Real time monitoring by laser reflectance interferometry

Publisher: Edp Sciences

E-ISSN: 1764-7177|11|PR3|Pr3-1175-Pr3-1182

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.11, Iss.PR3, 2001-08, pp. : Pr3-1175-Pr3-1182

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