Series resistance effects in submicron MOS transistors operated from 300 K down to 4.2 K

Publisher： Edp Sciences

E-ISSN： 1764-7177|04|C6|C6-31-C6-36

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.04, Iss.C6, 1994-06, pp. : C6-31-C6-36

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