CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS

E-ISSN： 1764-7177|01|C6|C6-335-C6-336

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-335-C6-336

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