Publisher: Edp Sciences
E-ISSN: 1764-7177|01|C6|C6-21-C6-21
ISSN: 1155-4339
Source: Le Journal de Physique IV, Vol.01, Iss.C6, 1991-12, pp. : C6-21-C6-21
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
RECOMBINATION MECHANISM AT DISLOCATIONS IN GaAs EBIC CONTRAST STUDY
Le Journal de Physique IV, Vol. 01, Iss. C6, 1991-12 ,pp. :
EBIC contrast study of the recombination mechanism at dislocations in GaAs
Journal de Physique III, Vol. 2, Iss. 3, 1992-03 ,pp. :
EBIC contrast theory of dislocations : intrinsic recombination properties
Revue de Physique Appliquée (Paris), Vol. 25, Iss. 4, 1990-04 ,pp. :