Mass spectrometry study of the gas phase reactions in the CVD of Si and in situ-phosphorus doped Si in order to explain the different growth rates

Publisher: Edp Sciences

E-ISSN: 1764-7177|03|C3|C3-99-C3-105

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.03, Iss.C3, 1993-08, pp. : C3-99-C3-105

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