Strain-Induced Atomic Rearrangements in Ge Overlayers on Si(001)

Publisher: Edp Sciences

E-ISSN: 1764-7177|7|C2|C2-669-C2-673

ISSN: 1155-4339

Source: Le Journal de Physique IV, Vol.7, Iss.C2, 1997-04, pp. : C2-669-C2-673

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