INFLUENCE OF H2 PARTIAL PRESSURE ON THE MORPHOLOGY AND CRYSTALLIZATION OF SiC LAYERS OBTAINED BY LPCVD USING TETRAMETHYLSILANE

Publisher： Edp Sciences

E-ISSN： 1764-7177|02|C2|C2-225-C2-232

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-225-C2-232

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