REFLECTION-ABSORPTION IR SPECTROSCOPY AS AN IN-SITU PROBE OF THE SURFACE CHEMISTRY OF SEMICONDUCTOR GROWTH INTERMEDIATES : THE ADSORPTION OF TRIMETHYLGALLIUM AT GaAs (100) SURFACES AT 300 K

Publisher： Edp Sciences

E-ISSN： 1764-7177|02|C2|C2-167-C2-173

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.02, Iss.C2, 1991-09, pp. : C2-167-C2-173

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Kramers-Kronig analysis applied to reflection-absorption spectroscopy

By Yamamoto K.   Ishida H.  

Vibrational Spectroscopy, Vol. 15, Iss. 1, 1997-08 ,pp. : 27-36

Elsevier

Access to resources Recommend Favorite

In-situ analysis of planetary surfaces by Mössbauer spectroscopy

By Klingelhöfer G.  

Hyperfine Interactions, Vol. 113, Iss. 1-4, 1998-08 ,pp. : 369-374

Springer Publishing Company

Access to resources Recommend Favorite

In-situ investigation of Bi thin film condensation by surface sensitive X-ray absorption spectroscopy at cryogenic temperatures

By  

Journal of Physics: Conference Series , Vol. 190, Iss. 1, 2009-11 ,pp. : 660-665

IOP Publishing

Access to resources Recommend Favorite

IN SITU IR-ATR-SPECTROSCOPY OF ELECTRODE SURFACES

By  

Le Journal de Physique Colloques, Vol. 44, Iss. C10, 1983-12 ,pp. : C10-517-C10-520

Edp Sciences

Access to resources Recommend Favorite

Growth dynamics of GaAs on a vicinal surface of GaAs(100) in migration-stimulated epitaxy: Computer simulation

By Tsyrlin G.  

Technical Physics Letters, Vol. 23, Iss. 2, 1997-02 ,pp. : 154-156

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite