A photoluminescence study of δ-doped GaAs

E-ISSN： 1764-7177|03|C5|C5-299-C5-302

ISSN： 1155-4339

Source： Le Journal de Physique IV, Vol.03, Iss.C5, 1993-10, pp. : C5-299-C5-302

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Effect of misorientation angle on the photoluminescence spectra of Si (δ)-doped GaAs (111)A layers grown by molecular beam epitaxy

By Galiev G. Mokerov V. Khabarov Yu.

Doklady Physics, Vol. 46, Iss. 2, 2001-02 ,pp. : 88-91

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

β-NMR Study of a buried Mn δ-doped layer in a silicon host

Journal of Physics: Conference Series , Vol. 551, Iss. 1, 2014-12 ,pp. : 141-145

IOP Publishing

Access to resources Recommend Favorite

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

Le Journal de Physique IV, Vol. 09, Iss. PR8, 1999-09 ,pp. : Pr8-1163-Pr8-1169

Edp Sciences

Access to resources Recommend Favorite

Resonant photoluminescence from modulation-doped InAs -GaAs quantum dots

By Guasch C. Sotomayor Torres C.M. Ledentsov N.N. Bimberg D. Ustinov V.M. Kop'ev P.S.

Superlattices and Microstructures, Vol. 21, Iss. 4, 1997-04 ,pp. : 509-516

Academic Press

Access to resources Recommend Favorite

Chemical vapor deposition and photoluminescence properties of Zn-DOPED GaAs

Revue de Physique Appliquée (Paris), Vol. 13, Iss. 12, 1978-12 ,pp. : 783-785

Edp Sciences

Access to resources Recommend Favorite